100V N Channel Power MOSFET Siliup SP010N02AAGHTO featuring split gate trench technology and low RDS
Key Attributes
Model Number:
SP010N02AAGHTO
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
300A
RDS(on):
1.9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Number:
1 N-channel
Reverse Transfer Capacitance (Crss@Vds):
32pF
Output Capacitance(Coss):
1.908nF
Input Capacitance(Ciss):
11.975nF
Pd - Power Dissipation:
295W
Gate Charge(Qg):
175nC
Mfr. Part #:
SP010N02AAGHTO
Package:
TOLL
Product Description
Product Overview
The SP010N02AAGHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is designed for applications requiring efficient power management, including PWM applications and hard-switched, high-frequency circuits. It has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N02AAGHTO
- Technology: Advanced Split Gate Trench Technology
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |
| RDS(on) Typ. | 1.5 | m@10V | ||
| Continuous Drain Current | ID | 300 | A | |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDS | 100 | V | (Ta=25 unless otherwise noted) |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current (Tc=25) | ID | 300 | A | |
| Continuous Drain Current (Tc=100) | ID | 200 | A | |
| Pulsed Drain Current | IDM | 1200 | A | |
| Single Pulse Avalanche Energy | EAS | 1681 | mJ | |
| Power Dissipation (Tc=25) | PD | 295 | W | |
| Thermal Resistance Junction-to-Case | RJC | 0.42 | /W | |
| Storage Temperature Range | TSTG | -55 to 150 | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA |
| Drain Cut-Off Current | IDSS | - | A | VDS=80V, VGS=0V, TJ=25 |
| Gate Leakage Current | IGSS | - | nA | VGS=20V, VDS=0V |
| Gate Threshold Voltage | VGS(th) | 2-4 | V | VGS=VDS, ID =250uA |
| Drain-Source ON Resistance | RDS(ON) | - 1.9 | m | VGS=10V, ID=20A |
| Input Capacitance | Ciss | - 11975 | pF | VDS=50V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | - 1908 | pF | |
| Reverse Transfer Capacitance | Crss | - 32 | ||
| Total Gate Charge | Qg | - 175 | nC | VDS=50V, VGS=10V, ID=125A |
| Gate-Source Charge | Qgs | - 45 | ||
| Gate-Drain Charge | Qg | - 32 | ||
| Turn-On Delay Time | td(on) | - 25 | nS | VDD=50V, VGS=10V, RG=1.6, ID=125A |
| Rise Time | tr | - 75 | ||
| Turn-Off Delay Time | td(off) | - 89 | ||
| Fall Time | tf | - 29 | ||
| Source-Drain Diode Forward Voltage | VSD | - 1.2 | V | IS = 1A, VGS = 0V |
| Maximum Body-Diode Continuous Current | IS | - 300 | A | |
| Reverse Recovery Time | Trr | - 96 | nS | IS=50A, di/dt=100A/us, TJ=25 |
| Reverse Recovery Charge | Qrr | - 248 | nC | |
| TOLL Package Information (Dimensions in Millimeters) | ||||
| Dimension | Symbol | Min. | Nom. | Max. |
| A | A | 2.20 | 2.30 | 2.40 |
| b | b | 0.65 | 0.75 | 0.85 |
| C | C | 0.508 | REF | |
| D | D | 10.25 | 10.40 | 10.55 |
| D1 | D1 | 2.85 | 3.00 | 3.15 |
| E | E | 9.75 | 9.90 | 10.05 |
| E1 | E1 | 9.65 | 9.80 | 9.95 |
| E2 | E2 | 8.95 | 9.10 | 9.25 |
| E3 | E3 | 7.25 | 7.40 | 7.55 |
| e | e | 1.20 | BSC | |
| F | F | 1.05 | 1.20 | 1.35 |
| H | H | 11.55 | 11.70 | 11.85 |
| H1 | H1 | 6.03 | 6.18 | 6.33 |
| H2 | H2 | 6.85 | 7.00 | 7.15 |
| H3 | H3 | 3.00 | BSC | |
| L | L | 1.55 | 1.70 | 1.85 |
| L1 | L1 | 0.55 | 0.7 | 0.85 |
| L2 | L2 | 0.45 | 0.6 | 0.75 |
| M | M | 0.08 | REF. | |
| 8 | 10 | 12 | ||
| K | K | 4.25 | 4.40 | 4.55 |
2504101957_Siliup-SP010N02AAGHTO_C45351237.pdf
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