Power Management Solutions Featuring Siliup SP40P10NJ 40V P Channel MOSFET with Fast Switching Speed

Key Attributes
Model Number: SP40P10NJ
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
23A
RDS(on):
10.5mΩ@10V;14mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
222pF
Number:
1 P-Channel
Output Capacitance(Coss):
323pF
Input Capacitance(Ciss):
3.5nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
SP40P10NJ
Package:
PDFN-8L(3x3)
Product Description

Product Overview

The SP40P10NJ is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low On-Resistance (10.5m typ. at -10V, 14m typ. at -4.5V), and 100% Single Pulse avalanche energy tested. This MOSFET is suitable for applications such as DC-DC Converters and Power Management. It is available in a PDFN3X3-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: SP40P10NJ
  • Package: PDFN3X3-8L
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -40 V
Static Drain-Source On-Resistance RDS(on) -10V 10.5 14 m
Static Drain-Source On-Resistance RDS(on) -4.5V 14 20 m
Continuous Drain Current ID Tc=25C -23 A
Absolute maximum ratings (Ta=25,unless otherwise noted)
Drain-Source Voltage VDSS -40 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID Tc=25C -23 A
Continuous Drain Current ID Tc=100C -15 A
Pulse Drain Current Tested IDM -92 A
Single Pulse Avalanche Energy EAS 144 mJ
Power Dissipation PD Tc=25C 50 W
Thermal Resistance Junction-to-Case RJC 2.5 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -40 V
Drain-Source Leakage Current IDSS VDS=-32V , VGS=0V , TJ=25 -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.0 -1.6 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID=-12A 10.5 14 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-10A 14 20 m
Input Capacitance Ciss VDS=-20V , VGS=0V , f=1MHz 3500 pF
Output Capacitance Coss 323 pF
Reverse Transfer Capacitance Crss 222 pF
Total Gate Charge Qg VDS=-25V , VGS=-10V , ID=-25A 72 nC
Gate-Source Charge Qgs 8 nC
Gate-Drain Charge Qg d 15 nC
Turn-On Delay Time Td(on) VDD=-25V,VGS=-10V,RG=6, ID=-25A 12 nS
Rise Time Tr 10 nS
Turn-Off Delay Time Td(off) 203 nS
Fall Time Tf 91 nS
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
Maximum Body-Diode Continuous Current IS -23 A
Reverse recover time Trr IS=-25A, di/dt=100A/us, TJ=25 24 nS
Reverse recovery charge Qrr 12 nC
Package Information (PDFN3X3-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.650 - 0.850 0.026 - 0.033
A1 0.152 REF. 0.006 REF.
A2 0~0.05 0~0.002
D 2.900 - 3.100 0.114 - 0.122
D1 2.300 - 2.600 0.091 - 0.102
E 2.900 - 3.100 0.114 - 0.122
E1 3.150 - 3.450 0.124 - 0.136
E2 1.535 - 1.935 0.060 - 0.076
b 0.200 - 0.400 0.008 - 0.016
e 0.550 - 0.750 0.022 - 0.030
L 0.300 - 0.500 0.012 - 0.020
L1 0.180 - 0.480 0.007 - 0.019
L2 0~0.100 0~0.004
L3 0~0.100 0~0.004
H 0.315 - 0.515 0.012 - 0.020
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2504101957_Siliup-SP40P10NJ_C41355194.pdf

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