High Speed Switching Silicon Carbide Diode ROHM SCS308APC9 for Power Electronics Applications
Key Attributes
Model Number:
SCS308APC9
Product Custom Attributes
Reverse Leakage Current (Ir):
40uA@650V
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
650V
Voltage - Forward(Vf@If):
1.35V@8A
Current - Rectified:
8A
Mfr. Part #:
SCS308APC9
Package:
TO-220-2
Product Description
Product Overview
The SCS308AP is a Silicon Carbide (SiC) Schottky Barrier Diode designed for high-speed switching applications. It offers shorter recovery times, reduced temperature dependence, and high surge current capability, making it suitable for various power electronics applications.
Product Attributes
- Brand: ROHM
- Material: Silicon carbide epitaxial planar type
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Reverse voltage (repetitive peak) | VRM | 650 | V | |||
| Reverse voltage (DC) | VR | 650 | V | |||
| Continuous forward current | IF | Tc= 135C | 8 | A | ||
| Repetitive peak forward current | IFRM | 36 | A | |||
| Surge non-repetitive forward current | IFSM | PW=10ms sinusoidal, Tj=25C | 67 | A | ||
| Surge non-repetitive forward current | IFSM | PW=10ms sinusoidal, Tj=150C | 57 | A | ||
| Surge non-repetitive forward current | IFSM | PW=10s square, Tj=25C | 250 | A | ||
| i2t value | i2dt | 1PW10ms, Tj=25C | 22 | A2s | ||
| i2t value | i2dt | 1PW10ms, Tj=150C | 16 | A2s | ||
| Total power dissipation | PD | 57 | W | |||
| Junction temperature | Tj | 175 | C | |||
| Range of storage temperature | Tstg | -55 | +175 | C | ||
| DC blocking voltage | VDC | IR =50A | 650 | - | - | V |
| Forward voltage | VF | IF=8A, Tj=25C | - | 1.35 | 1.50 | V |
| Forward voltage | VF | IF=8A, Tj=150C | - | 1.44 | 1.71 | V |
| Forward voltage | VF | IF=8A, Tj=175C | - | 1.50 | - | V |
| Reverse current | IR | VR=650V, Tj=25C | - | 0.024 | 40 | A |
| Reverse current | IR | VR=650V, Tj=150C | - | 1.6 | 160 | A |
| Reverse current | IR | VR=650V, Tj=175C | - | 4.8 | - | A |
| Total capacitive charge | QC | VR=400V, di/dt=350A/s | - | 21 | - | nC |
| Total capacitance | C | VR=1V, f=1MHz | - | 400 | - | pF |
| Total capacitance | C | VR=650V, f=1MHz | - | 36 | - | pF |
| Non-repetitive Avalanche Energy | Eava | L=1mH | - | 110 | - | mJ |
| Switching time | tC | VR=400V, di/dt=350A/s | - | 15 | - | ns |
| Thermal resistance (junction-to-case) | Rth(j-c) | - | 1.89E-02 | 2.6 | C/W |
2107272240_ROHM-SCS308APC9_C559678.pdf
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