Switching N Channel Planar MOSFET Siliup SP18N20TH with 200V Drain Source Voltage and Low Gate Charge
Key Attributes
Model Number:
SP18N20TH
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
160mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
52pF
Number:
1 N-channel
Output Capacitance(Coss):
183pF
Pd - Power Dissipation:
130W
Input Capacitance(Ciss):
1.133nF
Gate Charge(Qg):
64nC@10V
Mfr. Part #:
SP18N20TH
Package:
TO-252-2L
Product Description
Product Overview
The SP18N20TH is a 200V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching applications, this MOSFET features fast switching speeds, low gate charge, and low RDS(on). It is 100% tested for single pulse avalanche energy and is ideal for DC-DC converters and synchronous rectification.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel Planar MOSFET
- Package: TO-252
- Device Code: SP18N20TH
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 200 | V | |||
| RDS(on) | @10V | 0.16 | ||||
| Continuous Drain Current | ID | 18 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 200 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 30 | V | ||
| Continuous Drain Current | ID | (TC=25) | 18 | A | ||
| Continuous Drain Current | ID | (TC=100) | 12 | A | ||
| Pulsed Drain Current | IDM | 72 | A | |||
| Single Pulse Avalanche Energy | EAS | 180 | mJ | |||
| Power Dissipation | PD | (TC=25) | 130 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.96 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 200 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=160V , VGS=0V , TJ=25 | - | - | 25 | uA |
| Gate-Source Leakage Current | IGSS | VGS=30V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=6A | - | 0.16 | 0.2 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 1133 | - | pF |
| Output Capacitance | Coss | - | 183 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 52 | - | pF | |
| Total Gate Charge | Qg | VDS=160V , VGS=10V , ID=11A | - | 64 | - | nC |
| Gate-Source Charge | Qgs | - | 11 | - | ||
| Gate-Drain Charge | Qg | - | 31 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=100V VGS=10V , RG=2.5, ID=11A | - | 11 | - | nS |
| Rise Time | Tr | - | 18 | - | ||
| Turn-Off Delay Time | Td(off) | - | 25 | - | ||
| Fall Time | Tf | - | 6 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 18 | A | |
| Reverse Recovery Time | Trr | IS=18A, di/dt=100A/us, TJ=25 | - | 160 | - | nS |
| Reverse Recovery Charge | Qrr | - | 880 | - | nC | |
| TO-252 Package Information (Dimensions in Millimeters) | |||
|---|---|---|---|
| Symbol | Min. | Max. | REF. |
| A | 2.200 | 2.400 | |
| A1 | 0.000 | 0.127 | |
| b | 0.660 | 0.860 | |
| c | 0.460 | 0.580 | |
| D | 6.500 | 6.700 | |
| D1 | 5.100 | 5.460 | |
| D2 | 4.830 | ||
| E | 6.000 | 6.200 | |
| e | 2.186 | 2.386 | |
| L | 9.800 | 10.400 | |
| L1 | 2.900 | ||
| L2 | 1.400 | 1.700 | |
| L3 | 1.600 | ||
| L4 | 0.600 | 1.000 | |
| 1.100 | 1.300 | ||
| 0 | 8 | 0 | |
| h | 0.000 | 0.300 | |
| V | 5.350 | ||
2504101957_Siliup-SP18N20TH_C42372375.pdf
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