Siliup SP4606ACP8 complementary mosfet 30 volt device for power management and battery protection applications
Key Attributes
Model Number:
SP4606ACP8
Product Custom Attributes
Drain To Source Voltage:
30V;30V
Current - Continuous Drain(Id):
7A
RDS(on):
15mΩ@10V;22mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF;142pF
Number:
-
Output Capacitance(Coss):
81pF;146pF
Input Capacitance(Ciss):
572pF;1.07nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
7.2nC@4.5V;21nC@10V
Mfr. Part #:
SP4606ACP8
Package:
SOP-8
Product Description
Product Overview
The SP4606ACP8 is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this lead-free, surface-mount device is ideal for battery protection, load switching, and power management applications. It features 100% single pulse avalanche energy testing for reliability.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP4606ACP8
- Package: SOP-8L
- Certifications: Lead free product is acquired
- Device Code: 4606A
Technical Specifications
| Product Summary | |||
| Parameter | N-Channel | P-Channel | Unit |
| V(BR)DSS | 30V | -30V | |
| RDS(on)TYP | 15m@10V, 20m@4.5V | 22m@-10V, 32m@-4.5V | |
| ID | 7A | -7A | |
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||
| Parameter | Symbol | N-Channel | P-Channel | Units |
| Drain-Source Voltage | VDS | 30 | -30 | V |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current | ID | 7 | -7 | A |
| Pulsed Drain Current | IDM | 28 | -28 | A |
| Single Pulse Avalanche Energy | EAS | 13 | 30 | mJ |
| Power Dissipation | PD | 2.5 | W | |
| Thermal Resistance Junction-to-Ambient | RJA | 50 | /W | |
| Storage Temperature Range | TSTG | -55 to 150 | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| N-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V, VGS=0V, TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =250uA | 1 | 1.5 | 2.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=5A | - | 15 | 22 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=3A | - | 20 | 30 | m |
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHz | - | 572 | - | pF |
| Output Capacitance | Coss | - | 81 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 65 | - | pF | |
| Total Gate Charge | Qg | VDS=20V, VGS=4.5V, ID=12A | - | 7.2 | - | nC |
| Gate-Source Charge | Qgs | - | 1.4 | - | ||
| Gate-Drain Charge | Qgd | - | 2.2 | - | ||
| Turn-On Delay Time | Td(on) | VDD=12V, VGS=10V, RG=3.3, ID=5A | - | 4.1 | - | nS |
| Rise Time | Tr | - | 9.8 | - | ||
| Turn-Off Delay Time | Td(off) | - | 15.5 | - | ||
| Fall Time | Tf | - | 6.0 | - | ||
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 7 | A | |
| Reverse Recovery Time | Trr | IS=10A, di/dt=100A/us, TJ=25 | - | 15 | - | nS |
| Reverse Recovery Charge | Qrr | - | 3 | - | nC | |
| P-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-24V, VGS=0V, TJ=25 | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =-250uA | -1 | -1.5 | -2.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-5A | - | 22 | 30 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-3A | - | 32 | 50 | m |
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | - | 1070 | - | pF |
| Output Capacitance | Coss | - | 146 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 142 | - | pF | |
| Total Gate Charge | Qg | VDS=-30V, VGS=-10V, ID=-6A | - | 21 | - | nC |
| Gate-Source Charge | Qgs | - | 2.1 | - | ||
| Gate-Drain Charge | Qgd | - | 5.6 | - | ||
| Turn-On Delay Time | Td(on) | VDD=-15V, VGS=-10V, RG=6, ID=-1A | - | 7 | - | nS |
| Rise Time | Tr | - | 9 | - | ||
| Turn-Off Delay Time | Td(off) | - | 30 | - | ||
| Fall Time | Tf | - | 18 | - | ||
| Diode Forward Voltage | VSD | VGS=0V, IS=-1A, TJ=25 | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | -7 | A | |
| Reverse Recovery Time | Trr | IS=-20A, di/dt=-100A/us, Tj=25 | - | 50 | - | nS |
| Reverse Recovery Charge | Qrr | - | 31 | - | nC | |
| SOP-8L Package Information | ||
| Symbol | Dimensions In Millimeters | |
| A | Min. 1.35, Max. 1.75 | |
| A1 | Min. 0.10, Max. 0.25 | |
| A2 | Min. 1.35, Max. 1.55 | |
| b | Min. 0.33, Max. 0.51 | |
| c | Min. 0.17, Max. 0.25 | |
| D | Min. 4.80, Max. 5.00 | |
| e | REF. 1.27 | |
| E | Min. 5.80, Max. 6.20 | |
| E1 | Min. 3.80, Max. 4.00 | |
| L | Min. 0.40, Max. 1.27 | |
| 0 to 8 | ||
2504101957_Siliup-SP4606ACP8_C41355092.pdf
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