power management solution Shenzhen ruichips Semicon RU30L70L P Channel MOSFET with low on resistance
Key Attributes
Model Number:
RU30L70L
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-
RDS(on):
5.5mΩ@10V;9mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
320pF
Number:
1 P-Channel
Output Capacitance(Coss):
505pF
Input Capacitance(Ciss):
4.68nF
Pd - Power Dissipation:
90W
Gate Charge(Qg):
86nC@10V
Mfr. Part #:
RU30L70L
Package:
TO-252
Product Description
Product Overview
The RU30L70L is a P-Channel Advanced Power MOSFET designed for efficient power management and load switching applications. It features a low on-resistance, super high dense cell design, and ESD protection. This device is 100% avalanche tested and operates at temperatures up to 175C, making it suitable for demanding environments. It is available in lead-free and green (RoHS compliant) versions.
Product Attributes
- Brand: Ruichips
- Origin: CHINA
- Certifications: RoHS Compliant (Lead Free and Green Devices Available)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, IDS=-250A | ||
| Gate Threshold Voltage | VGS(th) | -1 | -2.5 | -30 | V | VDS=VGS, IDS=-250A |
| Gate Leakage Current | IGSS | 10 | A | VGS=20V, VDS=0V | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS=-30V, VGS=0V, TJ=125C | ||
| Drain-Source On-state Resistance | RDS(ON) | 5.5 | 6.5 | m | VGS=-10V, IDS=-35A | |
| 9 | 11 | VGS=-4.5V, IDS=-28A | ||||
| Diode Forward Voltage | VSD | -1.2 | V | ISD=-35A, VGS=0V | ||
| Reverse Recovery Time | trr | 89 | ns | ISD=-35A, dlSD/dt=100A/s | ||
| Reverse Recovery Charge | Qrr | 55 | nC | |||
| Gate Resistance | RG | 3.6 | ||||
| Input Capacitance | Ciss | 4680 | pF | VGS=0V,VDS=0V,F=1MHz | ||
| Output Capacitance | Coss | 505 | ||||
| Reverse Transfer Capacitance | Crss | 320 | ||||
| Turn-on Delay Time | td(ON) | 35 | ns | VDD=-15V,IDS=-35A, VGEN=-10V,RG=6 | ||
| Turn-on Rise Time | tr | 66 | ||||
| Turn-off Delay Time | td(OFF) | 74 | ||||
| Turn-off Fall Time | tf | 30 | ||||
| Gate Charge | Qg | 86 | nC | VDS=-24V, VGS=-10V, IDS=-35A | ||
| Qgs | 20 | |||||
| Qgd | 25 | |||||
| Drain-Source Voltage | VDSS | -30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Maximum Junction Temperature | TJ | 175 | C | |||
| Storage Temperature Range | TSTG | -55 | 175 | C | ||
| Diode Continuous Forward Current | IS | -70 | A | TC=25C | ||
| Pulsed Drain Current | IDP | -280 | A | TC=25C | ||
| Tested Continuous Drain Current | ID | -70 | A | TC=25C, VGS=-10V | ||
| -49 | TC=100C, VGS=-10V | |||||
| Maximum Power Dissipation | PD | 90 | W | TC=25C (Mounted on Large Heat Sink) | ||
| 45 | TC=100C (Mounted on Large Heat Sink) | |||||
| Avalanche Energy, Single Pulsed | EAS | 110 | mJ | IAS =-21A, VDD =-24V, RG = 50, Starting TJ = 25C | ||
| Thermal Resistance-Junction to Case | RJC | 1.65 | C/W | |||
| Thermal Resistance-Junction to Ambient | RJA | 100 | C/W | (Mounted on Large Heat Sink) |
2410122015_Shenzhen-ruichips-Semicon-RU30L70L_C180955.pdf
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