Shenzhen ruichips Semicon RU6085H N Channel Power MOSFET ideal for power switch and load management
Key Attributes
Model Number:
RU6085H
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
RDS(on):
8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
115pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.45nF
Output Capacitance(Coss):
310pF
Pd - Power Dissipation:
50W
Mfr. Part #:
RU6085H
Package:
SOP-8
Product Description
Product Overview
The RU6085H is an N-Channel Advanced Power MOSFET featuring a super high dense cell design for ultra-low on-resistance and fast switching speeds. It is designed for power management, switch, and load switch applications. Available in lead-free and green (RoHS compliant) options.
Product Attributes
- Brand: Ruichips Semiconductor Co., Ltd
- Certifications: RoHS Compliant
Technical Specifications
| Symbol | Parameter | Test Condition | Unit | Min. | Typ. | Max. |
| VDSS | Drain-Source Voltage | V | 60 | |||
| VGSS | Gate-Source Voltage | V | ±20 | |||
| TJ | Maximum Junction Temperature | °C | 150 | |||
| TSTG | Storage Temperature Range | °C | -55 | 150 | ||
| ID | Continuous Drain Current (VGS=10V) | TA=25°C | A | 80 | ||
| ID | Continuous Drain Current (VGS=10V) | TA=70°C | A | 50 | ||
| PD | Maximum Power Dissipation | TA=25°C | W | 2.5 | ||
| PD | Maximum Power Dissipation | TA=70°C | W | 1.6 | ||
| RθJC | Thermal Resistance-Junction to Case | °C/W | ||||
| RθJA | Thermal Resistance-Junction to Ambient | °C/W | 50 | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250µA | V | 60 | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=60V, VGS=0V | µA | 1 | ||
| IDSS | Zero Gate Voltage Drain Current | TJ=125°C | µA | 30 | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250µA | V | 1 | 1.6 | 3 |
| IGSS | Gate Leakage Current | VGS=±20V, VDS=0V | nA | ±100 | ||
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V, IDS=20A | mΩ | 6 | 7 | |
| RDS(ON) | Drain-Source On-state Resistance | VGS=4.5V, IDS=12A | mΩ | 6.5 | 8 | |
| VSD | Diode Forward Voltage | ISD=20A, VGS=0V | V | 1.2 | ||
| trr | Reverse Recovery Time | ISD=20A, dlSD/dt=100A/µs | ns | 38 | ||
| Qrr | Reverse Recovery Charge | nC | 72 | |||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | Ω | 1.2 | ||
| Ciss | Input Capacitance | VGS=0V, VDS=30V, Frequency=1.0MHz | pF | 3450 | ||
| Coss | Output Capacitance | pF | 310 | |||
| Crss | Reverse Transfer Capacitance | pF | 115 | |||
| td(ON) | Turn-on Delay Time | VDD=30V,IDS=20A, VGEN=10V,RG=4.7Ω | ns | 28 | ||
| tr | Turn-on Rise Time | ns | 32 | |||
| td(OFF) | Turn-off Delay Time | ns | 98 | |||
| tf | Turn-off Fall Time | ns | 68 | |||
| Qg | Total Gate Charge | VDS=48V, VGS=10V, IDS=20A | nC | 75 | ||
| Qgs | Gate-Source Charge | nC | 19 | |||
| Qgd | Gate-Drain Charge | nC | 26 |
2409302202_Shenzhen-ruichips-Semicon-RU6085H_C181990.pdf
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