Power MOSFET 250V N Channel Siliup SP025N16GHTF with Split Gate Trench Technology and Low On Resistance
Key Attributes
Model Number:
SP025N16GHTF
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
85A
RDS(on):
16mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
10.9pF
Number:
1 N-channel
Pd - Power Dissipation:
363W
Output Capacitance(Coss):
362pF
Input Capacitance(Ciss):
5.654nF
Gate Charge(Qg):
71nC@10V
Mfr. Part #:
SP025N16GHTF
Package:
TO-247
Product Description
Product Overview
The SP025N16GHTF is a 250V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched and high frequency circuits, and power management.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP025N16GHTF
- Package: TO-247
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | 250 | V | |||
| On-Resistance (Typical) | RDS(on) | @10V | 16 | m | ||
| Continuous Drain Current | ID | 85 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 250 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 85 | A | |||
| Continuous Drain Current (Tc=100) | ID | 57 | A | |||
| Pulsed Drain Current | IDM | 340 | A | |||
| Single Pulse Avalanche Energy | EAS | 400 | mJ | |||
| Power Dissipation (Tc=25) | PD | 363 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.34 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 250 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=200V , VGS=0V , TJ=25 | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 | 3 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=20A | - | 16 | 20 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=125V , VGS=0V , f=1MHz | - | 5654 | - | pF |
| Output Capacitance | Coss | - | 362 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 10.9 | - | pF | |
| Total Gate Charge | Qg | VDS=125V , VGS=10V , ID=20A | - | 71 | - | nC |
| Gate-Source Charge | Qgs | - | 22.8 | - | nC | |
| Gate-Drain Charge | Qgd | - | 9.5 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=125V , VGS=10V , RG=10 ID=20A | - | 16.5 | - | nS |
| Rise Time | tr | - | 23.8 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 32 | - | nS | |
| Fall Time | tf | - | 16.6 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 85 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=200A/us, TJ=25 | - | 168 | - | nS |
| Reverse Recovery Charge | Qrr | - | 795 | - | nC | |
Package Information (TO-247)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.850 | 5.150 | 0.191 | 0.200 |
| A1 | 2.200 | 2.600 | 0.087 | 0.102 |
| b | 1.000 | 1.400 | 0.039 | 0.055 |
| b1 | 2.800 | 3.200 | 0.110 | 0.126 |
| b2 | 1.800 | 2.200 | 0.071 | 0.087 |
| c | 0.500 | 0.700 | 0.020 | 0.028 |
| c1 | 1.900 | 2.100 | 0.075 | 0.083 |
| D | 15.450 | 15.750 | 0.608 | 0.620 |
| E1 | 3.500 REF. | 0.138 REF. | ||
| E2 | 3.600 REF. | 0.142 REF. | ||
| L | 40.900 | 41.300 | 1.610 | 1.626 |
| L1 | 24.800 | 25.100 | 0.976 | 0.988 |
| L2 | 20.300 | 20.600 | 0.799 | 0.811 |
| 7.100 | 7.300 | 0.280 | 0.287 | |
| e | 5.450 TYP. | 0.215 TYP. | ||
| H | 5.980 REF. | 0.235 REF. | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 |
Order Information
| Device | Package | Unit/Tube |
|---|---|---|
| SP025N16GHTF | TO-247 | 30 |
2506271720_Siliup-SP025N16GHTF_C49257242.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
