Power Switching Device Siliup SP010P16GHTQ 100V P Channel MOSFET with Low RDSon and Fast Switching
Key Attributes
Model Number:
SP010P16GHTQ
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
296pF
Number:
-
Output Capacitance(Coss):
752pF
Pd - Power Dissipation:
180W
Input Capacitance(Ciss):
6.825nF
Gate Charge(Qg):
98nC@10V
Mfr. Part #:
SP010P16GHTQ
Package:
TO-220-3L-C
Product Description
Product Overview
The SP010P16GHTQ is a 100V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for applications requiring fast switching, low gate charge, and low RDS(on). It features advanced Split Gate Trench Technology and has undergone 100% single pulse avalanche energy testing. This MOSFET is suitable for PWM applications, hard switched and high frequency circuits, and power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010P16GHTQ
- Package: TO-220-3L
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -100 | V | |||
| RDS(on) Typ. | RDS(on)TYP | @-10V | 16 | m | ||
| Continuous Drain Current | ID | -60 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | -100 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | -60 | A | ||
| Continuous Drain Current | ID | (Tc=100) | -40 | A | ||
| Pulsed Drain Current | IDM | -240 | A | |||
| Single Pulse Avalanche Energy | EAS | 625 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 180 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.69 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID= -250uA | -100 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-80V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID = -250uA | -2 | -3 | -4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID= -20A | 16 | 20 | m | |
| Input Capacitance | Ciss | VDS=-50V , VGS=0V , f=1MHz | 6825 | pF | ||
| Output Capacitance | Coss | VDS=-50V , VGS=0V , f=1MHz | 752 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-50V , VGS=0V , f=1MHz | 296 | pF | ||
| Total Gate Charge | Qg | VDS=-50V , VGS=10V , ID=-20A | 98 | nC | ||
| Gate-Source Charge | Qgs | VDS=-50V , VGS=10V , ID=-20A | 26 | nC | ||
| Gate-Drain Charge | Qg d | VDS=-50V , VGS=10V , ID=-20A | 13 | nC | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-50V , VGS=10V , RG=1.6,ID=-20A | 16 | nS | ||
| Rise Time | Tr | VDD=-50V , VGS=10V , RG=1.6,ID=-20A | 58 | nS | ||
| Turn-Off Delay Time | Td(off) | VDD=-50V , VGS=10V , RG=1.6,ID=-20A | 145 | nS | ||
| Fall Time | Tf | VDD=-50V , VGS=10V , RG=1.6,ID=-20A | 56 | nS | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -60 | A | |||
| Reverse Recovery Time | Trr | IS=-20A, di/dt=100A/us, TJ=25 | 96 | nS | ||
| Reverse Recovery Charge | Qrr | IS=-20A, di/dt=100A/us, TJ=25 | 205 | nC | ||
| Package Information (TO-220-3L) | ||||||
| Dimension | Symbol | Min. (mm) | Max. (mm) | Min. (in) | Max. (in) | |
| A | A | 4.400 | 4.600 | 0.173 | 0.181 | |
| A1 | A1 | 2.250 | 2.550 | 0.089 | 0.100 | |
| b | b | 0.710 | 0.910 | 0.028 | 0.036 | |
| b1 | b1 | 1.170 | 1.370 | 0.046 | 0.054 | |
| c | c | 0.330 | 0.650 | 0.013 | 0.026 | |
| c1 | c1 | 1.200 | 1.400 | 0.047 | 0.055 | |
| D | D | 9.910 | 10.250 | 0.390 | 0.404 | |
| E | E | 8.950 | 9.750 | 0.352 | 0.384 | |
| E1 | E1 | 12.650 | 13.050 | 0.498 | 0.514 | |
| e | e | 2.540 TYP. | 0.100 TYP. | |||
| e1 | e1 | 4.980 | 5.180 | 0.196 | 0.204 | |
| F | F | 2.650 | 2.950 | 0.104 | 0.116 | |
| H | H | 7.900 | 8.100 | 0.311 | 0.319 | |
| h | h | 0.000 | 0.300 | 0.000 | 0.012 | |
| L | L | 12.900 | 13.400 | 0.508 | 0.528 | |
| L1 | L1 | 2.850 | 3.250 | 0.112 | 0.128 | |
| V | V | 6.900 REF. | 0.276 REF. | |||
| 3.400 | 3.800 | 0.134 | 0.150 | |||
2504101957_Siliup-SP010P16GHTQ_C42372356.pdf
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