60V P Channel MOSFET Siliup SP60P23TH with Fully Characterized Avalanche Voltage and Current Ratings
Key Attributes
Model Number:
SP60P23TH
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
40A
RDS(on):
28mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
141pF
Number:
1 P-Channel
Output Capacitance(Coss):
224pF
Pd - Power Dissipation:
86.8W
Input Capacitance(Ciss):
3.635nF
Gate Charge(Qg):
25nC@4.5V
Mfr. Part #:
SP60P23TH
Package:
TO-252-2L
Product Description
Product Overview
The SP60P23TH is a 60V P-Channel MOSFET designed for load switch applications. It features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and good stability with high EAS. The device offers excellent heat dissipation in its TO-252-2L package.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60P23TH
- Package: TO-252-2L (G:1 D:2 S:3)
- Origin: Shanghai
Technical Specifications
| Parameter | Symbol | Conditions | Limit | Unit |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | -60 | V |
| Gate-Source Voltage | VGS | - | 20 | V |
| Drain Current-Continuous1 | ID | (Ta=25) | -40 | A |
| Drain Current-Continuous (100) | ID(100) | - | -34 | A |
| Pulsed Drain Current2 | IDM | - | -90 | A |
| Single Pulse Avalanche Energy3 | EAS | - | 101 | mJ |
| Maximum Power Dissipation4 | PD | (Ta=25) | 86.8 | W |
| Operating Junction and Storage Temperature Range | TJ,TSTG | - | -55 To 150 | |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -60 | V |
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V , TJ=25 | --- | 1 uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | --- | 100 nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1 | -2.5 V |
| Static Drain-Source On-Resistance2 | RDS(ON) | VGS=-10V , ID=-18A | --- | 23 m (Typ) |
| Static Drain-Source On-Resistance2 | RDS(ON) | VGS=-10V , ID=-18A | --- | 28 m (Max) |
| Static Drain-Source On-Resistance2 | RDS(ON) | VGS=-4.5V , ID=-12A | --- | 29 m (Typ) |
| Static Drain-Source On-Resistance2 | RDS(ON) | VGS=-4.5V , ID=-12A | --- | 35 m (Max) |
| Total Gate Charge (-4.5V) | Qg | VDS=-20V , VGS=-4.5V , ID=-12A | --- | 25 nC |
| Gate-Source Charge | Qgs | - | --- | 6.7 nC |
| Gate-Drain Charge | Qgd | - | --- | 5.5 nC |
| Turn-On Delay Time | td(on) | VDD=-15V , VGS=-10V , RG=3.3, ID=-1A | --- | 38 ns |
| Rise Time | tr | - | --- | 23.6 ns |
| Turn-Off Delay Time | td(off) | - | --- | 100 ns |
| Fall Time | tf | - | --- | 6.8 ns |
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | --- | 3635 pF |
| Output Capacitance | Coss | - | --- | 224 pF |
| Reverse Transfer Capacitance | Crss | - | --- | 141 pF |
| Continuous Source Current1,5 | IS | VG=VD=0V , Force Current | --- | -40 A |
| Diode Forward Voltage2 | VSD | VGS=0V , IS=-1A , TJ=25 | --- | -1 V |
Notes:
1. Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. Tested by pulsed, pulse width 300s, duty cycle 2%.
3. EAS data shows Max. rating. Test condition: VDD=-25V, VGS=-10V, L=0.1mH, IAS=-45A.
4. Power dissipation is limited by 150 junction temperature.
5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2411212332_Siliup-SP60P23TH_C41355209.pdf
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