P Channel MOSFET 100V 4A Continuous Drain Current Siliup SP010P190T1 Surface Mount Low On Resistance
Key Attributes
Model Number:
SP010P190T1
Product Custom Attributes
Drain To Source Voltage:
100V
Configuration:
-
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
190mΩ@10V;210mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
38pF
Number:
1 P-Channel
Output Capacitance(Coss):
42pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
1.239nF
Gate Charge(Qg):
17.5nC@10V
Mfr. Part #:
SP010P190T1
Package:
SOT-23-3L
Product Description
Product Overview
The SP010P190T1 is a 100V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a continuous drain current of -4A and features low on-resistance characteristics at typical operating voltages.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010P190T1
- Device Code: 10P19
- Package: SOT-23-3L
- Technology: P-Channel MOSFET
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -100 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @ -10V | 190 | 250 | m | |
| Static Drain-Source On-Resistance | RDS(on) | @ -4.5V | 210 | 300 | m | |
| Continuous Drain Current | ID | -4 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25) | -100 | V | ||
| Gate-Source Voltage | VGSS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Ta=25) | -4 | A | ||
| Pulse Drain Current | IDM | (Tested, Ta=25) | -16 | A | ||
| Power Dissipation | PD | (Ta=25) | 1.5 | W | ||
| Thermal Resistance Junction-to-Ambient | RJA | (Ta=25) | 83 | C/W | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -100 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-80V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-0.5A | 190 | 250 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-0.4A | 210 | 300 | m | |
| Input Capacitance | Ciss | VDS=-25V , VGS=0V , f=1MHz | 1239 | pF | ||
| Output Capacitance | Coss | VDS=-25V , VGS=0V , f=1MHz | 42 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-25V , VGS=0V , f=1MHz | 38 | pF | ||
| Total Gate Charge | Qg | VDS=-60V , VGS=-10V , ID=-3A | 17.5 | nC | ||
| Gate-Source Charge | Qgs | VDS=-60V , VGS=-10V , ID=-3A | 2.8 | nC | ||
| Gate-Drain Charge | Qgd | VDS=-60V , VGS=-10V , ID=-3A | 3.2 | nC | ||
| Turn-On Delay Time | td(on) | VDD=-50V VGS=-10V , RG=10, ID=-3A | 9.1 | nS | ||
| Turn-On Rise Time | tr | VDD=-50V VGS=-10V , RG=10, ID=-3A | 14.9 | nS | ||
| Turn-Off Delay Time | td(off) | VDD=-50V VGS=-10V , RG=10, ID=-3A | 57.4 | nS | ||
| Turn-Off Fall Time | tf | VDD=-50V VGS=-10V , RG=10, ID=-3A | 34.4 | nS | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Package Information | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | Typ. | ||
| A | 1.050 | 1.250 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 1.050 | 1.150 | ||||
| b | 0.300 | 0.500 | ||||
| c | 0.100 | 0.200 | ||||
| D | 2.820 | 3.020 | ||||
| E | 1.500 | 1.700 | ||||
| E1 | 2.650 | 2.950 | ||||
| e | 0.950 | |||||
| e1 | 1.800 | 2.000 | ||||
| L | 0.300 | 0.600 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP010P190T1_C41354938.pdf
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