Siliup SP60N30TH 60V N Channel MOSFET featuring fast switching and low RDS on at 4.5V for power switching
Key Attributes
Model Number:
SP60N30TH
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
45pF
Number:
1 N-channel
Output Capacitance(Coss):
60pF
Input Capacitance(Ciss):
1.18nF
Pd - Power Dissipation:
40W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
SP60N30TH
Package:
TO-252
Product Description
Product Overview
The SP60N30TH is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) at various gate voltages (30m @ 10V, 40m @ 4.5V). This MOSFET is 100% tested for single pulse avalanche energy. It is suitable for DC-DC converters and power switching applications.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 60N30
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | - | - | - | 60 | V |
| RDS(on)TYP | RDS(on) | 10V | - | 30 | - | m |
| RDS(on)TYP | RDS(on) | 4.5V | - | 40 | - | m |
| ID | ID | - | - | - | 25 | A |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | - | - | - | 60 | V |
| Gate-Source Voltage | VGS | - | - | - | 20 | V |
| Continuous Drain Current (TC=25) | ID | TC=25 | - | - | 25 | A |
| Continuous Drain Current (TC=100) | ID | TC=100 | - | - | 17 | A |
| Pulsed Drain Current | IDM | - | - | - | 100 | A |
| Single Pulse Avalanche Energy | EAS | 1 | - | - | 25 | mJ |
| Power Dissipation (TC=25) | PD | TC=25 | - | - | 40 | W |
| Thermal Resistance Junction-to-Case | RJC | - | - | 3.1 | - | /W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V, VGS=0V, TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 1.0 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=10A | - | 30 | 40 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=5A | - | 40 | 50 | m |
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHz | - | 1180 | - | pF |
| Output Capacitance | Coss | - | - | 60 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 45 | - | pF |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=45A | - | 14 | - | nC |
| Gate-Source Charge | Qgs | - | - | 2.9 | - | nC |
| Gate-Drain Charge | Qg | - | - | 5.2 | - | nC |
| Turn-On Delay Time | Td(on) | VDD=30V, VGS=10V, RG=3, ID=2A | - | 5 | - | nS |
| Rise Time | Tr | - | - | 15 | - | nS |
| Turn-Off Delay Time | Td(off) | - | - | 24 | - | nS |
| Fall Time | Tf | - | - | 2.3 | - | nS |
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 25 | A |
| Reverse Recovery Time | Trr | IS=10A, di/dt=100A/us, TJ=25 | - | 21 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 19 | - | nC |
| Package Information (TO-252) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 2.200 | 2.400 | 0.087 | 0.094 | - | - |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 | - | - |
| b | 0.660 | 0.860 | 0.026 | 0.034 | - | - |
| c | 0.460 | 0.580 | 0.018 | 0.023 | - | - |
| D | 6.500 | 6.700 | 0.256 | 0.264 | - | - |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 | - | - |
| D2 | 4.830 REF. | 0.190 REF. | - | - | - | - |
| E | 6.000 | 6.200 | 0.236 | 0.244 | - | - |
| e | 2.186 | 2.386 | 0.086 | 0.094 | - | - |
| L | 9.800 | 10.400 | 0.386 | 0.409 | - | - |
| L1 | 2.900 REF. | 0.114 REF. | - | - | - | - |
| L2 | 1.400 | 1.700 | 0.055 | 0.067 | - | - |
| L3 | 1.600 REF. | 0.063 REF. | - | - | - | - |
| L4 | 0.600 | 1.000 | 0.024 | 0.039 | - | - |
| 1.100 | 1.300 | 0.043 | 0.051 | - | - | |
| 0 | 8 | 0 | 8 | - | - | |
| h | 0.000 | 0.300 | 0.000 | 0.012 | - | - |
| V | 5.350 REF. | 0.211 REF. | - | - | - | - |
2504101957_Siliup-SP60N30TH_C22466826.pdf
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