Siliup SP40N25DP8 Dual N Channel MOSFET 40V Featuring Low RDS on and Fast Switching for Power Circuits
Key Attributes
Model Number:
SP40N25DP8
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
6.3A
RDS(on):
25mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
40.5pF
Number:
2 N-Channel
Output Capacitance(Coss):
79.1pF
Pd - Power Dissipation:
1.25W
Input Capacitance(Ciss):
453pF
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
SP40N25DP8
Package:
SOP-8
Product Description
Product Overview
The SP40N25DP8 is a 40V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 40N25
- Package: SOP-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 40 | V | ||||
| RDS(on) | @10V | 25 | m | |||
| ID | 6.3 | A | ||||
| RDS(on) | @4.5V | 35 | m | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 6.3 | A | |||
| Pulsed Drain Current | IDM | 25.2 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 51 | mJ | |||
| Power Dissipation | PD | 1.25 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 100 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=6A | - | 25 | 32 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=4A | - | 35 | 45 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 453 | - | pF |
| Output Capacitance | Coss | - | 79.1 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 40.5 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=6A | - | 10 | - | nC |
| Gate-Source Charge | Qgs | - | 1.8 | - | ||
| Gate-Drain Charge | Qgd | - | 2.4 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20V ,VGS=10V , RG=6, ID=1A | - | 2.7 | - | nS |
| Rise Time | Tr | - | 2.7 | - | ||
| Turn-Off Delay Time | Td(off) | - | 14 | - | ||
| Fall Time | Tf | - | 6 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 6.3 | A | |
| Reverse Recovery Time | Trr | IS=2A, di/dt=100A/us, TJ=25 | - | 11.2 | - | nS |
| Reverse Recovery Charge | Qrr | - | 4.8 | - | nC | |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | (REF.) | 1.27 | ||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
Note: 1. The test condition is VDD=25V, VGS=10V, L=0.1mH, RG=25
2504101957_Siliup-SP40N25DP8_C41355071.pdf
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