Low gate charge and fast switching MOSFET Siliup SP4407P8 30V P Channel for uninterruptible power supplies
Key Attributes
Model Number:
SP4407P8
Product Custom Attributes
Pd - Power Dissipation:
2.5W
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
11.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10.5mΩ@10V;13mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
266pF
Number:
1 P-Channel
Output Capacitance(Coss):
294pF
Input Capacitance(Ciss):
2.367nF
Gate Charge(Qg):
30nC@4.5V
Mfr. Part #:
SP4407P8
Package:
SOP-8L
Product Description
Product Overview
The SP4407P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP4407P8
- Package Type: SOP-8L
- Marking Code: 4407
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | -30 | V | |||
| RDS(on)TYP | RDS(on) | @ -10V | 10.5 | 13 | m | |
| ID | ID | -11.5 | A | |||
| RDS(on)TYP | RDS(on) | @ -4.5V | 13 | 18 | m | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (Ta=25) | -11.5 | A | ||
| Pulsed Drain Current | IDM | -46 | A | |||
| Single Pulse Avalanche Energy | EAS | 56 | mJ | |||
| Power Dissipation | PD | (Ta=25) | 2.5 | W | ||
| Junction-to-Ambient Thermal Resistance | RJA | 50 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-9A | - | 10.5 | 13 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-7A | - | 13 | 18 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 2367 | - | pF |
| Output Capacitance | Coss | - | 294 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 266 | - | pF | |
| Total Gate Charge | Qg | VDS=-15V , VGS=-4.5V , ID=-12A | - | 30 | - | nC |
| Gate-Source Charge | Qgs | - | 10 | - | nC | |
| Gate-Drain Charge | Qg d | - | 10.4 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-15V ,VGS=-10V , RG=3.3, ID=-1A | - | 9.4 | - | nS |
| Rise Time | Tr | - | 10.2 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 117 | - | nS | |
| Fall Time | Tf | - | 24 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | -11.5 | A | |
| Reverse Recovery Time | Trr | IS=-10A, di/dt=100A/us, TJ=25 | - | 15 | - | nS |
| Reverse Recovery Charge | Qrr | - | 6 | - | nC | |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 REF. | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP4407P8_C41355017.pdf
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