Power MOSFET Siliup SP40N03BTH 40V N Channel Device with Low Gate Charge and Avalanche Energy Rating

Key Attributes
Model Number: SP40N03BTH
Product Custom Attributes
Drain To Source Voltage:
40V
Configuration:
-
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5mΩ@10V;5.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
380pF
Number:
1 N-channel
Output Capacitance(Coss):
970pF
Pd - Power Dissipation:
110W
Input Capacitance(Ciss):
5.4nF
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
SP40N03BTH
Package:
TO-252
Product Description

Product Overview

The SP40N03BTH is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for efficiency, it features fast switching, low gate charge, and low RDS(on) at both 10V and 4.5V gate drive. This device is 100% tested for single pulse avalanche energy, making it suitable for demanding applications such as DC-DC converters and load switching.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: SP40N03BTH
  • Package: TO-252

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 40 V
RDS(on) Typ. RDS(on) @10V 3.5 m
RDS(on) Typ. RDS(on) @4.5V 5.5 m
Continuous Drain Current ID 120 A
Single Pulse Avalanche Energy EAS 289 mJ
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (TC=25) ID 120 A
Continuous Drain Current (TC=100) ID 80 A
Pulsed Drain Current IDM 480 A
Power Dissipation (TC=25) PD 110 W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 - - V
Drain-Source Leakage Current IDSS VDS=32V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.6 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=20A - 3.5 5 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=10A - 5.5 8 m
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz - 5400 - pF
Output Capacitance Coss - 970 - pF
Reverse Transfer Capacitance Crss - 380 - pF
Total Gate Charge Qg VDS=20V , VGS=10V , ID=20A - 75 - nC
Gate-Source Charge Qgs - 10.5 - nC
Gate-Drain Charge Qgd - 17 - nC
Turn-On Delay Time Td(on) VDD=20V VGS=10V , RG=3, ID=2A - 15 - nS
Rise Time Tr - 18 - nS
Turn-Off Delay Time Td(off) - 52 - nS
Fall Time Tf - 23 - nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 120 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, Tj=25 - 23 - nS
Reverse Recovery Charge Qrr - 12 - nC

Package Dimensions (TO-252):

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 2.200 2.400 0.087 0.094
A1 0.000 0.127 0.000 0.005
b 0.660 0.860 0.026 0.034
c 0.460 0.580 0.018 0.023
D 6.500 6.700 0.256 0.264
D1 5.100 5.460 0.201 0.215
D2 4.830 REF. 0.190 REF.
E 6.000 6.200 0.236 0.244
e 2.186 2.386 0.086 0.094
L 9.800 10.400 0.386 0.409
L1 2.900 REF. 0.114 REF.
L2 1.400 1.700 0.055 0.067
L3 1.600 REF. 0.063 REF.
L4 0.600 1.000 0.024 0.039
1.100 1.300 0.043 0.051
0 8 0 8
h 0.000 0.300 0.000 0.012
V 5.350 REF. 0.211 REF.

2504101957_Siliup-SP40N03BTH_C41354887.pdf

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