Low RDS on 30V N Channel MOSFET Siliup SP30N03ATH Suitable for Load Switching and Power Management

Key Attributes
Model Number: SP30N03ATH
Product Custom Attributes
Pd - Power Dissipation:
55W
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.8mΩ@10V;5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
289pF
Number:
1 N-channel
Output Capacitance(Coss):
369pF
Input Capacitance(Ciss):
3.068nF
Gate Charge(Qg):
44nC@10V
Mfr. Part #:
SP30N03ATH
Package:
TO-252
Product Description

Product Overview

The SP30N03ATH is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-efficiency applications, it features fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for DC-DC converters and load switching applications, offering a continuous drain current of 110A at 25 and 73A at 100. It is tested to 100% single pulse avalanche energy for enhanced reliability.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: 30N03A
  • Package: TO-252

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 30 V
Static Drain-Source On-Resistance RDS(on) @10V 2.8 m
Static Drain-Source On-Resistance RDS(on) @4.5V 5 m
Continuous Drain Current ID 110 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25) 30 V
Gate-Source Voltage VGS (Ta=25) 20 V
Continuous Drain Current ID (TC=25) 110 A
Continuous Drain Current ID (TC=100) 73 A
Pulsed Drain Current IDM 440 A
Single Pulse Avalanche Energy EAS1 240 mJ
Power Dissipation PD (TC=25) 55 W
Thermal Resistance Junction-to-Case RJC 2.3 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 - - V
Drain-Source Leakage Current IDSS VDS=24V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=20A - 2.8 3.5 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=10A - 5 6.6 m
Dynamic Characteristics
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz - 3068 - pF
Output Capacitance Coss - 369 -
Reverse Transfer Capacitance Crss - 289 -
Total Gate Charge Qg VDS=15V , VGS=10V , ID=20A - 44 - nC
Gate-Source Charge Qgs - 7 -
Gate-Drain Charge Qgd - 8 -
Switching Characteristics
Turn-On Delay Time td(on) VDD=15V VGS=10V , RG=3, ID=30A - 10 - nS
Rise Time tr - 29 -
Turn-Off Delay Time td(off) - 46 -
Fall Time tf - 17 -
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 110 A
Reverse Recovery Time trr IS=30A, di/dt=100A/us, TJ=25 - 17 - nS
Reverse Recovery Charge Qrr - 7 - nC

Package Information (TO-252)

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 2.200 2.400 0.087 0.094
A1 0.000 0.127 0.000 0.005
b 0.660 0.860 0.026 0.034
c 0.460 0.580 0.018 0.023
D 6.500 6.700 0.256 0.264
D1 5.100 5.460 0.201 0.215
D2 4.830 REF. 0.190 REF.
E 6.000 6.200 0.236 0.244
e 2.186 2.386 0.086 0.094
L 9.800 10.400 0.386 0.409
L1 2.900 REF. 0.114 REF.
L2 1.400 1.700 0.055 0.067
L3 1.600 REF. 0.063 REF.
L4 0.600 1.000 0.024 0.039
1.100 1.300 0.043 0.051
0 8 0 8
h 0.000 0.300 0.000 0.012
V 5.350 REF. 0.211 REF.

2504101957_Siliup-SP30N03ATH_C41354855.pdf
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