Low RDS on 30V N Channel MOSFET Siliup SP30N03ATH Suitable for Load Switching and Power Management
Product Overview
The SP30N03ATH is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-efficiency applications, it features fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for DC-DC converters and load switching applications, offering a continuous drain current of 110A at 25 and 73A at 100. It is tested to 100% single pulse avalanche energy for enhanced reliability.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 30N03A
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 30 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @10V | 2.8 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | @4.5V | 5 | m | ||
| Continuous Drain Current | ID | 110 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 30 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (TC=25) | 110 | A | ||
| Continuous Drain Current | ID | (TC=100) | 73 | A | ||
| Pulsed Drain Current | IDM | 440 | A | |||
| Single Pulse Avalanche Energy | EAS1 | 240 | mJ | |||
| Power Dissipation | PD | (TC=25) | 55 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 2.3 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 2.8 | 3.5 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=10A | - | 5 | 6.6 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 3068 | - | pF |
| Output Capacitance | Coss | - | 369 | - | ||
| Reverse Transfer Capacitance | Crss | - | 289 | - | ||
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=20A | - | 44 | - | nC |
| Gate-Source Charge | Qgs | - | 7 | - | ||
| Gate-Drain Charge | Qgd | - | 8 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=15V VGS=10V , RG=3, ID=30A | - | 10 | - | nS |
| Rise Time | tr | - | 29 | - | ||
| Turn-Off Delay Time | td(off) | - | 46 | - | ||
| Fall Time | tf | - | 17 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 110 | A | |
| Reverse Recovery Time | trr | IS=30A, di/dt=100A/us, TJ=25 | - | 17 | - | nS |
| Reverse Recovery Charge | Qrr | - | 7 | - | nC | |
Package Information (TO-252)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. |
2504101957_Siliup-SP30N03ATH_C41354855.pdf
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