Silicon Carbide MOSFET Model S1M040120H 1200V Designed for EV Battery Chargers and On Board Chargers
Key Attributes
Model Number:
S1M040120H
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
76A
RDS(on):
32mΩ@18V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Pd - Power Dissipation:
357W
Output Capacitance(Coss):
127pF
Input Capacitance(Ciss):
2.159nF
Gate Charge(Qg):
76nC
Mfr. Part #:
S1M040120H
Package:
TO-247-4L
Product Description
Product Overview
The S1M040120H is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt, leading to reduced cooling efforts, improved efficiency, and increased power density. This MOSFET is ideal for on-board chargers, EV battery chargers, booster/DC-DC converters, and switch-mode power supplies.
Product Attributes
- Brand: SiC (Sichain Semiconductor)
- Origin: China (Ningbo)
- Material: Silicon Carbide (SiC)
- Compliance: Halogen-free, RoHS compliant, REACH compliant
- Package Type: TO-247-4L
Technical Specifications
| Model | VDS (V) | IDS (A) (TC=25C) | RDS(ON) typ (m) (VGS=15V, ID=40A, TJ=25C) | TJ,max (C) | Package |
|---|---|---|---|---|---|
| S1M040120H | 1200 | 76 | 40 | 175 | TO247-4L |
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| VDS,max | Drain source voltage | 1200 | V | VGS = 0V, ID = 100A | |
| VGS,max | Gate source voltage | -8 / +22 | V | Absolute maximum values | Note1 |
| VGSop | Gate source voltage | -4 / +15 | V | Recommended operational values | |
| ID | Continuous drain current | 76 | A | VGS = 15V, TC = 25C | Fig.19 |
| ID | Continuous drain current | 53 | A | VGS = 15V, TC = 100C | |
| ID(pulse) | Pulsed drain current | 120 | A | Pulse width tP limited by Tj,max | Fig.22 |
| PD | Power dissipation | 357 | W | TC= 25C, TJ = 175C | Fig.20 |
| TJ, Tstg | Operating Junction and storage temperature | -55 to +175 | C | ||
| TL | Soldering temperature | 260 | C | 1.6mm (0.063) from case for 10s | |
| Rth(j-c) | Thermal resistance from junction to case | 0.42 | C/W | Fig.21 | |
| Rth(j-a) | Thermal resistance from junction to ambient | 33 | C/W | Not subject to production test. Parameter verified by design/characterization. | |
| V(BR)DSS | Drain-source breakdown voltage | 1200 | V | VGS = 0V, ID = 100A | |
| VGS(th) | Gate threshold voltage | 2.3 / 2.8 / 3.6 | V | VDS = VGS, ID = 10mA | Fig.11 |
| VGS(th) | Gate threshold voltage | 2.0 | V | VDS = VGS, ID = 10mA, TJ = 175C | |
| IDSS | Zero gate voltage drain current | 1 | A | VDS = 1200V, VGS = 0V | TJ = 25C |
| IDSS | Zero gate voltage drain current | 10 | A | VDS = 1200V, VGS = 0V | TJ = 175C |
| IGSS | Gate source leakage current | 100 | nA | VGS = 15V, VDS = 0V | |
| RDS(on) | Current drain-source on-state resistance | 40 / 50 | m | VGS = 15V, ID = 33.3A | Fig.4, 5,6 |
| RDS(on) | Current drain-source on-state resistance | 62 | m | VGS = 15V, ID = 33.3A, TJ = 175C | |
| RDS(on) | Current drain-source on-state resistance | 32 / 40 | m | VGS = 18V, ID = 33.3A | |
| RDS(on) | Current drain-source on-state resistance | 59 | m | VGS = 18V, ID = 33.3A, TJ = 175C | |
| gfs | Transconductance | 17 | S | VDS = 20V, ID = 33.3A | Fig.7 |
| gfs | Transconductance | 16 | S | VDS = 20V, ID = 33.3A, TJ = 175C | |
| Rg,int | Internal gate resistance | 0.9 | VAC = 25mV, f = 1MHz | ||
| VSD | Diode forward voltage | 3.8 | V | VGS = -4V, ISD = 20A | Fig.8,9, 10 |
| VSD | Diode forward voltage | 3.4 | V | VGS = -4V, ISD = 20A, TJ = 175C | |
| Ciss | Input capacitance | 2159 | pF | VDS = 1000V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100KHz | Fig.17,18 |
| Coss | Output capacitance | 127 | pF | VDS = 1000V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100KHz | Fig.17,18 |
| Crss | Reverse capacitance | 10 | pF | VDS = 1000V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100KHz | Fig.17,18 |
| Eoss | Coss stored energy | 79 | J | Fig.16 | |
| Qgs | Gate source charge | 16 | nC | VDS = 800V, VGS = -4/+15V, ID = 33.3A | Fig.12 |
| Qgd | Gate drain charge | 36 | nC | VDS = 800V, VGS = -4/+15V, ID = 33.3A | Fig.12 |
| Qg | Gate charge | 76 | nC | VDS = 800V, VGS = -4/+15V, ID = 33.3A | Fig.12 |
| Eon | Turn on switching energy | 259 | J | VDS = 800V, VGS = -4/+15V, ID = 33.3A, Rg = 2.5, L = 120uH | Fig.26 |
| Eoff | Turn off switching energy | 50 | J | VDS = 800V, VGS = -4/+15V, ID = 33.3A, Rg = 2.5, L = 120uH | Fig.26 |
| td(on) | Turn on delay time | 31 | ns | VDS = 800V, VGS = -4/+15V, ID = 33.3A, Rg = 2.5, L = 120uH | Fig.27 |
| tr | Rise time | 18 | ns | VDS = 800V, VGS = -4/+15V, ID = 33.3A, Rg = 2.5, L = 120uH | Fig.27 |
| td(off) | Turn off delay time | 32 | ns | VDS = 800V, VGS = -4/+15V, ID = 33.3A, Rg = 2.5, L = 120uH | Fig.27 |
| tf | Fall time | 9 | ns | VDS = 800V, VGS = -4/+15V, ID = 33.3A, Rg = 2.5, L = 120uH | Fig.27 |
| VSD | Diode forward voltage | 3.8 | V | VGS = -4V, ISD = 20A | Fig.8,9, 10 |
| VSD | Diode forward voltage | 3.4 | V | VGS = -4V, ISD = 20A, TJ = 175C | |
| IS | Continuous diode forward current | 76 | A | VGS = -4V, Tc = 25C | Note1 |
| trr | Reverse recovery time | 56 | nS | VR = 800V, VGS = -4V, ID = 33.3A, di/dt = 2325A/S, TJ = 175C | |
| Qrr | Reverse recovery charge | 660 | nC | VR = 800V, VGS = -4V, ID = 33.3A, di/dt = 2325A/S, TJ = 175C | |
| Irrm | Peak reverse recovery current | 22 | A | VR = 800V, VGS = -4V, ID = 33.3A, di/dt = 2325A/S, TJ = 175C |
2410121937_Sichainsemi-S1M040120H_C22363605.pdf
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