650V Super Junction MOSFET Siliup SP47MF65TF for Fast Switching PWM and Power Management Applications

Key Attributes
Model Number: SP47MF65TF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
47A
RDS(on):
65mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Output Capacitance(Coss):
140pF
Input Capacitance(Ciss):
3.08nF
Pd - Power Dissipation:
391W
Gate Charge(Qg):
194nC@10V
Mfr. Part #:
SP47MF65TF
Package:
TO-247
Product Description

Product Overview

The SP47MF65TF is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for fast switching applications, it features low gate charge and low RDS(on). This MOSFET is suitable for PWM applications, hard switched and high frequency circuits, and power management systems. It has undergone 100% single pulse avalanche energy testing.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: 47MF65
  • Package: TO-247

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 650 V
On-Resistance RDS(on)TYP @10V 65 m
Continuous Drain Current ID 47 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25,unless otherwise noted) 650 V
Gate-Source Voltage VGS (Ta=25,unless otherwise noted) 30 V
Continuous Drain Current ID (Tc=25) 47 A
Continuous Drain Current ID (Tc=100) 29 A
Pulsed Drain Current IDM 188 A
Single Pulse Avalanche Energy EAS 1 1160 mJ
Power Dissipation PD (Tc=25) 391 W
Thermal Resistance Junction-to-Case RJC 0.32 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 650 - - V
Drain-Source Leakage Current IDSS VDS = 520V, VGS = 0V - - 1 uA
Gate-Source Leakage Current IGSS VGS = 30V, VDS = 0V - - 0.1 nA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 3 4 5 V
Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 23A - 65 75 m
Input Capacitance Ciss VDS=25V , VGS=0V , f=1MHz - 3080 - pF
Output Capacitance Coss - 140 - pF
Reverse Transfer Capacitance Crss - 7 - pF
Total Gate Charge Qg VDS=480V , VGS=10V , ID=23A - 194 - nC
Gate-Source Charge Qgs - 35 -
Gate-Drain Charge Qgd - 90 -
Turn-On Delay Time Td(on) VDD=480V, VGS=10V , RG=2, ID=10A - 22 - nS
Rise Time Tr - 10 -
Turn-Off Delay Time Td(off) - 90 - nS
Fall Time Tf - 5 -
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 47 A
Reverse recover time Trr IS=23A, di/dt=100A/us, Tj=25 - 210 - nS
Reverse recovery charge Qrr - 1.2 - uC

TO-247 Package Dimensions (Millimeters/Inches)

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 4.850 5.150 0.191 0.200
A1 2.200 2.600 0.087 0.102
b2 1.800 2.200 0.071 0.087
b 1.000 1.400 0.039 0.055
b1 2.800 3.200 0.110 0.126
c 0.500 0.700 0.020 0.028
c1 1.900 2.100 0.075 0.083
D 15.450 15.750 0.608 0.620
E1 3.500 REF. 0.138 REF.
E2 3.600 REF. 0.142 REF.
L 40.900 41.300 1.610 1.626
L1 24.800 25.100 0.976 0.988
L2 20.300 20.600 0.799 0.811
7.100 7.300 0.280 0.287
e 5.450 TYP. 0.215 TYP.
H1 5.980 REF. 0.235 REF.
h 0.000 0.300 0.000 0.012

2504101957_Siliup-SP47MF65TF_C22466839.pdf

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