SG2M020170HJ 1700V Silicon Carbide MOSFET designed for high frequency switching and power conversion
Key Attributes
Model Number:
SG2M020170HJ
Product Custom Attributes
Drain To Source Voltage:
1.7kV
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3.1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7.5pF
Input Capacitance(Ciss):
5.265nF
Pd - Power Dissipation:
535W
Gate Charge(Qg):
209nC
Mfr. Part #:
SG2M020170HJ
Package:
TO-247-4L
Product Description
Product Overview
The SG2M020170HJ is a 1700V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, high blocking voltage with low on-resistance, and temperature-independent turn-off switching losses. Key benefits include reduced cooling effort, improved efficiency, increased power density, and the ability to operate at higher system switching frequencies. This MOSFET is suitable for demanding applications such as EV motor drives, PV string inverters, solar power optimizers, and switch-mode power supplies.
Product Attributes
- Brand: (Sichain Semiconductor)
- Origin: (Ningbo)
- Material: Silicon Carbide (SiC)
- Package: TO-247-4L
- Compliance: Halogen free, RoHS compliant
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions | Note |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS,max | - | - | 1700 | V | VGS = 0V, ID = 100 A | - |
| Gate-Source Voltage | VGS,max | -8 | - | +22 | V | Absolute maximum values | Note1 |
| Recommended Operational Gate-Source Voltage | VGSop | -4 | - | +18 | V | - | - |
| Continuous Drain Current | ID | - | 110 | - | A | VGS = 18V, TC = 25C | Fig.19 |
| Continuous Drain Current | ID | - | 78 | - | A | VGS = 18V, TC = 100C | - |
| Pulsed Drain Current | ID(pulse) | - | 220 | - | A | Pulse width tp limited by Tj,max | Fig.22 |
| Power Dissipation | PD | - | 535 | - | W | TC= 25C, TJ = 175C | Fig.20 |
| Operating Junction and Storage Temperature | TJ ,Tstg | -55 | - | +175 | C | - | - |
| Soldering Temperature | TL | - | 260 | - | C | 1.6mm (0.063) from case for 10s | - |
| Mounting Torque | TM | - | - | 8.8 | Nm lbf-in | M3 or 6-32 screw | - |
| Thermal Resistance Junction-to-Case | Rth(j-c) | - | 0.22 | 0.28 | C/W | - | Fig.21 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 1700 | - | - | V | VGS = 0V, ID = 100A | - |
| Gate Threshold Voltage | VGS(th) | 2.5 | 3.1 | 4 | V | VDS = VGS, ID = 24mA | Fig.11 |
| Gate Threshold Voltage (TJ=175C) | VGS(th) | - | 2.3 | - | V | VDS = VGS, ID = 24mA, TJ = 175C | - |
| Zero Gate Voltage Drain Current | IDSS | - | 1 | 10 | A | VDS = 1700V, VGS = 0V | - |
| Gate Source Leakage Current | IGSS | - | - | 100 | nA | VGS = 18V, VDS = 0V | - |
| Drain-Source On-State Resistance | RDS(on) | - | 20 | 28 | m | VGS = 18V, ID = 75A | Fig.4,5,6 |
| Drain-Source On-State Resistance (TJ=175C) | RDS(on) | - | - | 44 | m | VGS = 18V, ID = 75A, TJ = 175C | - |
| Transconductance | gfs | - | 51 | - | S | VDS = 20V, ID = 75A | Fig.7 |
| Transconductance (TJ=175C) | gfs | - | 41 | - | S | VDS = 20V, ID = 75A, TJ = 175C | - |
| Internal Gate Resistance | Rg,int | - | 2.7 | - | VAC = 25mV, f = 1MHz, open drain | - | |
| Input Capacitance | Ciss | - | 5265 | - | pF | VDS = 1400V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100kHz | Fig.17,18 |
| Output Capacitance | Coss | - | 188 | - | pF | - | - |
| Reverse Capacitance | Crss | - | 7.5 | - | pF | - | - |
| Coss Stored Energy | Eoss | - | 189 | - | J | - | Fig.16 |
| Gate Source Charge | Qgs | - | 75 | - | nC | VDS = 1200V, VGS = -4/+18V, ID = 75A | Fig.12 |
| Gate Drain Charge | Qgd | - | 56 | - | - | - | - |
| Gate Charge | Qg | - | 209 | - | - | - | - |
| Turn-on Switching Energy | Eon | - | 2229 | - | J | VDS = 1200V, VGS = -4/+18V, ID = 75A, Rg = 2.5, L = 16.7H | Fig.26 |
| Turn-off Switching Energy | Eoff | - | 501 | - | J | - | - |
| Turn-on Delay Time | tdon | - | 39 | - | ns | - | Fig.27 |
| Rise Time | tr | - | 21 | - | ns | - | - |
| Turn-off Delay Time | tdoff | - | 49 | - | ns | - | - |
| Fall Time | tf | - | 14 | - | ns | - | - |
| Diode Forward Voltage | VSD | - | 3.8 | - | V | VGS = -4V, ISD = 37.5A | Fig.8,9, 10 |
| Diode Forward Voltage (TJ=175C) | VSD | - | 3.3 | - | V | VGS = -4V, ISD = 37.5A, TJ = 175C | - |
| Continuous Diode Forward Current | IS | - | 110 | - | A | VGS = -4V, Tc = 25C | Note2 |
| Reverse Recovery Time | trr | - | 28 | - | ns | VR = 1200V, VGS = -4V, ID = 75A, di/dt = 6770A/s, TJ = 175C | - |
| Reverse Recovery Charge | Qrr | - | 1066 | - | nC | - | - |
| Peak Reverse Recovery Current | Irrm | - | 65 | - | A | - | - |
Note 1: when using MOSFET Body Diode VGS,max = -4 / +22V
Note 2: When using SiC Body Diode the maximum recommended VGS = -4 V
2504101957_Sichainsemi-SG2M020170HJ_C42456099.pdf
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