Power Switching MOSFET Siliup SP30N08GDNK 30V Dual N Channel with Low Gate Charge and Fast Switching
Key Attributes
Model Number:
SP30N08GDNK
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
24A
RDS(on):
8.5mΩ@10V;12mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
2 N-Channel
Output Capacitance(Coss):
240pF
Pd - Power Dissipation:
25W
Input Capacitance(Ciss):
625pF
Gate Charge(Qg):
7.1nC@10V
Mfr. Part #:
SP30N08GDNK
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The SP30N08GDNK is a 30V Dual N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications and isolated DC/DC converters in telecom and industrial sectors. The device is available in a PDFN5X6-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP30N08GDNK
- Technology: Split Gate Trench Technology
- Package: PDFN5X6-8L
- Device Code: 30N08GD
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 30 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 8.5 | m | ||
| RDS(on)TYP | RDS(on) | @4.5V | 12 | m | ||
| ID | ID | 24 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | ||
| Continuous Drain Current (Tc=25C) | ID | 24 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 16 | A | |||
| Pulse Drain Current | IDM | Tested | 96 | A | ||
| Single Pulse Avalanche Energy | EAS | 39.2 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 25 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 5 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 30 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=24V, VGS=0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | 1.7 | 2.5 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=15A | - | 8.5 | 11 | m |
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, ID=10A | - | 12 | 16 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=15V,F=1MHz | - | 625 | - | pF |
| Output Capacitance | Coss | - | 240 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 25 | - | pF | |
| Total Gate Charge | Qg | VDS=15V, VGS=10V, ID=10A | - | 7.1 | - | nC |
| Gate-Source Charge | Qgs | - | 2.2 | - | nC | |
| Gate-Drain Charge | Qg d | - | 3.1 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=15V, ID=10A, VGS=10V, RG=4.7 | - | 7 | - | nS |
| Rise Time | tr | - | 18.8 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 19.5 | - | nS | |
| Fall Time | tf | - | 3.4 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 24 | A | |
| Reverse Recovery Time | Trr | IS=10 A,di/dt=100 A/sTJ=25 | - | 12 | - | nS |
| Reverse Recovery Charge | Qrr | - | 19 | - | nC | |
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 | 1.000 | 0.035 | 0.039 | ||
| A3 | 0.254 REF. | 0.010 REF. | ||||
| D | 4.944 | 5.096 | 0.195 | 0.201 | ||
| E | 5.974 | 6.126 | 0.235 | 0.241 | ||
| D1 | 1.470 | 1.870 | 0.058 | 0.074 | ||
| D2 | 0.470 | 0.870 | 0.019 | 0.034 | ||
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | ||
| D3 | 4.824 | 4.976 | 0.190 | 0.196 | ||
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | ||
| k | 1.190 | 1.390 | 0.047 | 0.055 | ||
| b | 0.350 | 0.450 | 0.014 | 0.018 | ||
| e | 1.270 TYP. | 0.050 TYP. | ||||
| L | 0.559 | 0.711 | 0.022 | 0.028 | ||
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | ||
| H | 0.574 | 0.726 | 0.023 | 0.029 | ||
| 10 | 12 | 10 | 12 | |||
2504101957_Siliup-SP30N08GDNK_C22466707.pdf
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