86--136 6733 2386
quality 1200V Silicon Carbide MOSFET Sichainsemi S1M075120H1 N Channel Enhancement for Switching Performance factory
quality 1200V Silicon Carbide MOSFET Sichainsemi S1M075120H1 N Channel Enhancement for Switching Performance factory

1200V Silicon Carbide MOSFET Sichainsemi S1M075120H1 N Channel Enhancement for Switching Performance

Key Attributes
Model Number: S1M075120H1
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
38A
RDS(on):
70mΩ@18V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.9pF
Input Capacitance(Ciss):
920pF
Pd - Power Dissipation:
214W
Gate Charge(Qg):
40nC
Mfr. Part #:
S1M075120H1
Package:
TO-247-4L
Product Description

Product Overview

The S1M075120H1 is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt. Key benefits include reduced cooling effort and requirements, efficiency improvement, increased power density, and the ability to operate at higher system switching frequencies. This MOSFET is ideal for applications such as on-board chargers/PFC, EV battery chargers, booster/DC-DC converters, and switch-mode power supplies.

Product Attributes

  • Brand: (Sichain)
  • Product Line: Silicon Carbide Power MOSFET
  • Model: S1M075120H1
  • Package Type: TO-247-4L
  • Channel Type: N Channel Enhancement
  • Certifications: Halogen free, RoHS compliant
  • Origin: (Ningbo)
  • Datasheet Version: V02_00
  • Datasheet Date: 2023.09.15

Technical Specifications

Symbol Parameter Value Unit Test Conditions Note
VDS,max Drain source voltage 1200 V VGS = 0V, ID = 100A
VGS,max Gate source voltage -8 /+22 V Absolute maximum values Note1
VGSop Gate source voltage -4 /+18 V Recommended operational values
ID Continuous drain current 38 A VGS = 18V, TC = 25C Fig.19
ID Continuous drain current 27 A VGS = 18V, TC = 100C
ID(pulse) Pulsed drain current 80 A Pulse width tP limited by Tj,max Fig.22
PD Power dissipation 214 W TC= 25C,TJ = 175C Fig.20
TJ ,Tstg Operating Junction and storage temperature -55 to +175 C
TL Soldering temperature 260 C 1.6mm (0.063) from case for 10s
TM Mounting torque 1.8 - 8.8 Nm lbf-in M3 or 6-32 screw
Rth(j-c) Thermal resistance from junction to case 0.7 C/W Fig.21
Rth(j-a) Thermal resistance from junction to ambient 35 C/W Not subject to production test. Parameter verified by design/characterization.
V(BR)DSS Drain-source breakdown voltage 1200 V VGS = 0V, ID = 100A
VGS(th) Gate threshold voltage 2.3 / 2.8 / 3.6 V VDS = VGS, ID = 5mA Fig.11
VGS(th) Gate threshold voltage 2.1 V VDS = VGS, ID = 5mA, TJ = 175C
IDSS Zero gate voltage drain current 1 A VDS = 1200V, VGS = 0V Max 10
IGSS Gate source leakage current 100 nA VGS = 18V, VDS = 0V
RDS(on) Current drain-source on-state resistance 70 / 85 m VGS = 18V, ID = 20A Fig.4,5,6
RDS(on) Current drain-source on-state resistance 125 m VGS = 18V, ID = 20A, TJ = 175C
gfs Transconductance 10 S VDS = 20V, ID = 20A Fig.7
gfs Transconductance 9.2 S VDS = 20V, ID = 20A, TJ = 175C
Rg,int Internal gate resistance 1.5 VAC = 25mV, f = 1MHz
VSD Diode forward voltage 4.3 V VGS = -4V, ISD = 10A Fig.8,9,10
VSD Diode forward voltage 3.8 V VGS = -4V, ISD = 10A, TJ = 175C
Ciss Input capacitance 920 pF VDS = 1000V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 1MHz Fig.17,18
Coss Output capacitance 57 pF
Crss Reverse capacitance 3.9 pF
Eoss Coss stored energy 35 J Fig.16
Qgs Gate source charge 7 nC VDS = 800V, VGS = -4/+18V, ID = 20A Fig.12
Qgd Gate drain charge 19 nC
Qg Gate charge 40 nC
Eon Turn on switching energy 82 J VDD = 800V, VGS = -4/+15V, ID = 20A, Rg = 0, L = 120uH Fig.25
Eoff Turn off switching energy 24 J
tdon Turn on delay time 10 ns Fig.27
tr Rise time 8 ns
tdoff Turn off delay time 15 ns
tf Fall time 8 ns
VSD Diode forward voltage 4.3 V VGS = -4V, ISD = 10A Fig.8,9,10
VSD Diode forward voltage 3.8 V VGS = -4V, ISD = 10A, TJ = 175C
IS Continuous diode forward current 38 A Tc = 25C Note1
trr Reverse recovery time 37.6 nS VR = 800V, VGS = -4V, ID = 20A, di/dt = 2670A/S, TJ = 150C
Qrr Reverse recovery charge 306 nC
Irrm Peak reverse recovery current 16 A

2410121937_Sichainsemi-S1M075120H1_C22363607.pdf

Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance factory
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
quality digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free factory
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
quality Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits factory
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
quality Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy factory
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.