SG2M023120J1J Silicon Carbide MOSFET Featuring High Blocking Voltage and Low Reverse Recovery Charge
Key Attributes
Model Number:
SG2M023120J1J
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
107A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7.4pF
Pd - Power Dissipation:
484W
Input Capacitance(Ciss):
2.87nF
Gate Charge(Qg):
95nC
Mfr. Part #:
SG2M023120J1J
Package:
TO-263-7L
Product Description
Product Overview
The SG2M023120J1J is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, fully controllable dv/dt, and high blocking voltage with low on-resistance. The device features a fast intrinsic diode with low reverse recovery charge (Qrr) and temperature-independent turn-off switching losses. These characteristics lead to reduced cooling efforts, improved efficiency, increased power density, and the ability to increase system switching frequency. It is suitable for applications such as on-board chargers/PFC, EV battery chargers, booster/DC-DC converters, and switch mode power supplies.
Product Attributes
- Brand: (Sichain Semiconductor)
- Product Line: TriQSiCTM
- Material: Silicon Carbide (SiC)
- Channel Type: N Channel Enhancement
- Certifications: RoHS compliant, REACH compliant
Technical Specifications
| Type | VDS (V) | IDS (A) | RDS(on), typ (m) | TJ,max (C) | Marking | Package |
|---|---|---|---|---|---|---|
| SG2M023120J1J | 1200 | 107 (TC = 25C) | 23 (VGS = 18V, ID = 49A, TJ = 25C) | 175 | SG2M023120J1J | TO-263-7L |
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| VDS,max | Drain source voltage | 1200 | V | VGS = 0V, ID = 100A | |
| VGS,max | Gate source voltage | -8 /+22 | V | Absolute maximum values | Note1 |
| VGSop | Gate source voltage | -4 /+18 | V | Recommended operational values | |
| ID | Continuous drain current | 107 | A | VGS = 18V, TC = 25C | Fig.19 |
| ID | Continuous drain current | 76 | A | VGS = 18V, TC = 100C | |
| ID(pulse) | Pulsed drain current | 214 | A | Pulse width limited by TJ,max | Fig.22 |
| PD | Power dissipation | 484 | W | TC= 25C,TJ = 175C | Fig.20 |
| TJ ,Tstg | Operating Junction and storage temperature | -55 to +175 | C | ||
| TL | Soldering temperature | 260 | C | 1.6mm (0.063) from case for 10s | |
| Rth(j-c) | Thermal resistance from junction to case | 0.25 - 0.31 | C/W | Fig.21 | |
| V(BR)DSS | Drain-source breakdown voltage | 1200 | V | VGS = 0V, ID = 100A | |
| VGS(th) | Gate threshold voltage | 2.3 - 3.6 | V | VDS = VGS, ID = 14mA | Fig.11 |
| VGS(th) | Gate threshold voltage | 2.1 | V | VDS = VGS, ID = 14mA, TJ = 175C | |
| IDSS | Zero gate voltage drain current | 1 - 10 | A | VDS = 1200V, VGS = 0V | |
| IGSS | Gate source leakage current | 100 | nA | VGS = 18V, VDS = 0V | |
| RDS(on) | Current drain-source on-state resistance | 28 - 38 | m | VGS = 15V, ID = 49A | Fig.4,5, 6 |
| RDS(on) | Current drain-source on-state resistance | 44 | m | VGS = 15V, ID = 49A, TJ = 175C | |
| RDS(on) | Current drain-source on-state resistance | 23 - 31 | m | VGS = 18V, ID = 49A | |
| RDS(on) | Current drain-source on-state resistance | 42 | m | VGS = 18V, ID = 49A, TJ = 175C | |
| gfs | Transconductance | 36 | S | VDS = 20V, ID = 49A | Fig.7 |
| gfs | Transconductance | 33 | S | VDS = 20V, ID = 49A, TJ = 175C | |
| Rg,int | Internal gate resistance | 4.6 | VAC = 25mV, f = 1MHz, open drain | ||
| Ciss | Input capacitance | 2780 | pF | VDS = 1000V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100kHz | Fig.17, 18 |
| Coss | Output capacitance | 147 | pF | ||
| Crss | Reverse capacitance | 7.4 | pF | ||
| Eoss | Coss stored energy | 81 | J | Fig.16 | |
| Qgs | Gate source charge | 28 | nC | VDS = 800V, VGS = -4/+18V, ID = 49A | Fig.12 |
| Qgd | Gate drain charge | 26 | nC | ||
| Qg | Gate charge | 95 | nC | ||
| Eon | Turn on switching energy | 652 | J | VDS = 800V, VGS = -4/+18V, ID = 49A, Rg = 2.5, L = 16.7H | Fig.26 |
| Eoff | Turn off switching energy | 186 | J | ||
| tdon | Turn on delay time | 25 | ns | Fig.27 | |
| tr | Rise time | 14 | ns | ||
| tdoff | Turn off delay time | 42 | ns | ||
| tf | Fall time | 11 | ns | ||
| VSD | Diode forward voltage | 3.7 | V | VGS = -4V, ISD = 24.5A | Fig.8,9, 10 |
| VSD | Diode forward voltage | 3.3 | V | VGS = -4V, ISD = 24.5A, TJ = 175C | |
| IS | Continuous diode forward current | 107 | A | VGS = -4V, Tc = 25C | Note2 |
| trr | Reverse recovery time | 29 | ns | VR = 800V, VGS = -4V, ISD = 49A, di/dt = 3510A/s, TJ = 175C | |
| Qrr | Reverse recovery charge | 448 | nC | ||
| Irrm | Peak reverse recovery current | 27 | A |
Package Drawing
TO-263-7L-B
2504101957_Sichainsemi-SG2M023120J1J_C42456090.pdf
Related Products
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
