270V N Channel Planar MOSFET Siliup SP40N27TF Featuring Low Gate Charge and Low RDSon for Switching

Key Attributes
Model Number: SP40N27TF
Product Custom Attributes
Drain To Source Voltage:
270V
Configuration:
-
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
70mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
23pF
Number:
-
Output Capacitance(Coss):
338pF
Pd - Power Dissipation:
190W
Input Capacitance(Ciss):
2.516nF
Gate Charge(Qg):
46nC@10V
Mfr. Part #:
SP40N27TF
Package:
TO-247
Product Description

Product Overview

The SP40N27TF is a 270V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it ideal for high-frequency switching applications and synchronous rectification. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for DC-DC converters.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP40N27TF
  • Channel Type: N-Channel
  • Technology: Planar MOSFET
  • Package: TO-247
  • Marking: 40N27 (Device Code)

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
Drain-Source Voltage V(BR)DSS 270 V
RDS(on) RDS(on) @10V 70 m
Continuous Drain Current ID 40 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25) 270 V
Gate-Source Voltage VGS (Ta=25) 20 V
Continuous Drain Current ID (Tc=25) 40 A
Continuous Drain Current ID (Tc=100) 26.7 A
Pulsed Drain Current IDM 160 A
Single Pulse Avalanche Energy EAS 3380 mJ
Power Dissipation PD (Tc=25) 190 W
Thermal Resistance Junction-to-Case RJC 0.66 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 270 - - V
Drain Cut-Off Current IDSS VDS = 216V, VGS = 0V - - 1 A
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 3.0 4.0 V
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 22.5A - 70 88 m
Dynamic Characteristics
Input Capacitance Ciss VDS =25V, VGS = 0V, f = 1.0MHz - 2516 - pF
Output Capacitance Coss - 338 - pF
Reverse Transfer Capacitance Crss - 23 - pF
Total Gate Charge Qg VDS=200V , VGS=10V , ID=40A - 46 - nC
Gate-Source Charge Qgs - 17 -
Gate-Drain Charge Qgd - 20 -
Switching Characteristics
Turn-On Delay Time td(on) VGS = 125V, VDS =10V, RG=10, ID=40A - 31 - nS
Rise Time tr - 152 -
Turn-Off Delay Time td(off) - 49 -
Fall Time tf - 20 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 40 A
Body Diode Reverse Recovery Time Trr IS = 40A, dIF/dt = 100A/us - 215 - nS
Body Diode Reverse Recovery Charge Qrr - 1650 - nC

Package Information

TO-247 Package Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 4.850 5.150 0.191 0.200
A1 2.200 2.600 0.087 0.102
b2 1.800 2.200 0.071 0.087
b 1.000 1.400 0.039 0.055
b1 2.800 3.200 0.110 0.126
c 0.500 0.700 0.020 0.028
c1 1.900 2.100 0.075 0.083
D 15.450 15.750 0.608 0.620
E1 3.500 REF. 0.138 REF.
E2 3.600 REF. 0.142 REF.
L 40.900 41.300 1.610 1.626
L1 24.800 25.100 0.976 0.988
L2 20.300 20.600 0.799 0.811
7.100 7.300 0.280 0.287
e 5.450 TYP. 0.215 TYP.
H1 5.980 REF. 0.235 REF.
h 0.000 0.300 0.000 0.012

Order Information

Device Package Unit/Tube
SP40N27TF TO-247 30

2504101957_Siliup-SP40N27TF_C42372379.pdf

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