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quality 20V N Channel MOSFET Siliup SP2002KT5J Featuring Low Logic Level Gate Drive for Portable Electronics factory
quality 20V N Channel MOSFET Siliup SP2002KT5J Featuring Low Logic Level Gate Drive for Portable Electronics factory

20V N Channel MOSFET Siliup SP2002KT5J Featuring Low Logic Level Gate Drive for Portable Electronics

Key Attributes
Model Number: SP2002KT5J
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
350mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Output Capacitance(Coss):
20pF
Input Capacitance(Ciss):
120pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
SP2002KT5J
Package:
SOT-523
Product Description

Product Overview

The SP2002KT5J is a 20V N-Channel MOSFET designed for efficient load and power switching applications. It features a surface mount package, low RDS(on), and operates at low logic level gate drive, making it suitable for interfacing switching, battery management in ultra-small portable electronics, and logic level shifts. This ESD-protected MOSFET is manufactured by Shanghai Siliup Semiconductor Technology Co. Ltd.

Product Attributes

  • Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP2002KT5J
  • Channel Type: N-Channel
  • Package: SOT-523
  • Marking Code: 34K

Technical Specifications

Parameter Symbol Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS 12 V
Continuous Drain Current ID 0.75 A
Pulsed Drain Current IDM 1.8 A
Power Dissipation PD 0.15 W
Thermal Resistance from Junction to Ambient RJA 833 /W
Junction Temperature TJ 150
Storage Temperature TSTG -55 +150
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250A 20 V
Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 A
Gate-body leakage current IGSS VGS =10V, VDS = 0V 10 uA
Gate threshold voltage VGS(th) VDS =VGS, ID =250A 0.3 0.65 1 V
Drain-source on-resistance RDS(on) VGS = 4.5V, ID = 0.5A 0.25 0.38
Drain-source on-resistance RDS(on) VGS =2.5V, ID = 0.5A 0.35 0.45
Input Capacitance Ciss VDS =16V,VGS =0V, f=1MHz 79 120 pF
Output Capacitance Coss 13 20 pF
Reverse Transfer Capacitance Crss 9 15 pF
Turn-on delay time td(on) VGS=4.5V,VDS=10V, ID =500mA,RGEN=10 6.7 ns
Turn-on rise time tr 4.8 ns
Turn-off delay time td(off) 17.3 ns
Turn-off fall time tf 7.4 ns
Body Diode Voltage VSD IS=0.5A, VGS = 0V 0.7 1.3 V
Package Information (SOT-523)
Symbol Dimensions In Millimeters Min Max
A 0.700 0.900
A1 0.000 0.100
A2 0.700 0.800
b1 0.150 0.250
b2 0.250 0.350
C 0.100 0.200
D 1.500 1.700
E 0.700 0.900
E1 1.450 1.750
e (TYP) 0.500
e1 0.900 1.100
L (REF) 0.400
L1 0.260 0.460
0 8

2411212332_Siliup-SP2002KT5J_C41355130.pdf

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