General Purpose PNP Silicon Transistor Siliup MMBT3906NC with DFN1006 3L Package and 40V Voltage Rating
Key Attributes
Model Number:
MMBT3906NC
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
DC Current Gain:
300@10mA,1V
Transition Frequency(fT):
250MHz
Vce Saturation(VCE(sat)):
400mV@50mA,5mA
Type:
-
Pd - Power Dissipation:
100mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3906NC
Package:
DFN1006-3L
Product Description
Product Overview
The MMBT3906NC is a general-purpose PNP silicon transistor designed for switching applications. It features a collector-emitter voltage of -40V and a collector current of -0.2A. This transistor is housed in a compact DFN1006-3L package, making it suitable for space-constrained designs. It is manufactured by Shanghai Siliup Semiconductor Technology Co. Ltd.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Product Type: General Purpose Transistor
- Material: Silicon
- Polarity: PNP
- Package: DFN1006-3L
- Model: MMBT3906NC
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | |||||
| Collector Base Voltage | VCBO | -40 | V | ||
| Collector Emitter Voltage | VCEO | -40 | V | ||
| Emitter Base Voltage | VEBO | -5 | V | ||
| Collector Current | IC | -200 | mA | ||
| Power Dissipation | Ptot | 100 | mW | ||
| Junction Temperature | Tj | 150 | |||
| Storage Temperature Range | Tstg | -55 | +150 | ||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | |||||
| Collector-base breakdown voltage | BVCBO | IC=-100A ,IE=0 | -40 | V | |
| Collector-emitter breakdown voltage | BVCEO | IC=-100A , IB=0 | -40 | V | |
| Emitter-base breakdown voltage | BVEBO | IE=-100A,IC=0 | -5 | V | |
| Collector cut-off current | ICBO | VCB=-30V, IE=0 | -100 | nA | |
| Collector cut-off current | ICEO | VCE=-30V, IB=0 | -50 | nA | |
| Emitter cut-off current | IEBO | VEB=-5V, IC=0 | -100 | nA | |
| DC current gain | hFE | VCE=-1V, IC=-0.1mA | 60 | ||
| VCE=-1V, IC=-1mA | 80 | ||||
| VCE=-1V, IC=-10mA | 100 | 300 | |||
| VCE=-1V, IC=-50mA | 60 | ||||
| VCE=-1V, IC=-100mA | 30 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=-10mA, IB=-1mA | -0.25 | V | |
| IC=-50mA, IB=-5mA | -0.4 | V | |||
| Base-emitter saturation voltage | VBE(sat) | IC=-10mA, IB=-1mA | -0.65 | -0.85 | V |
| IC=-50mA, IB=-5mA | -0.95 | V | |||
| Transition frequency | fT | VCE= -20V, IC=-10mA,f=30MHz | 250 | MHZ | |
| Collector output capacitance | Cob | VCB=-5V, IE=0, f=1MHz | 4.5 | pF | |
| Base Input capacitance | Cib | VEB=-0.5V, IE=0, f=1MHz | 10 | pF | |
| Noise figure | NF | VCE=-5V, IE=-0.1mA, f=1kHz, RG=1k | 4 | dB | |
| Delay time | td | VCC=-3V,VBE(OFF)=0.5V, IC=-10mA,IB1=-1mA | 35 | ns | |
| Rise time | tr | 35 | ns | ||
| Storage time | ts | VCC=-3V, IC=-10mA, IB1= IB2=- 1mA | 225 | ns | |
| Fall time | tf | 75 | ns | ||
| DFN1006-3L Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Min. | Typ. | Max. |
| A | 0.47 | 0.50 | 0.55 | |
| A1 | 0.00 | - | 0.05 | |
| b | 0.10 | 0.15 | 0.20 | |
| b2 | 0.45 | 0.50 | 0.55 | |
| D | 0.95 | 1.0 | 1.05 | |
| E | 0.55 | 0.60 | 0.65 | |
| e | BSC | 0.35 | ||
| L1 | 0.20 | 0.25 | 0.30 | |
| L2 | 0.20 | 0.25 | 0.30 | |
| L3 | 0.40 | |||
| z | 0.02 | 0.05 | 0.08 | |
| Recommend Land Pattern (Unit: mm) | ||
|---|---|---|
| Dimensions | Value | |
| C | 0.70 | |
| G1 | 0.30 | |
| G2 | 0.20 | |
| X | 0.40 | |
| X1 | 1.10 | |
| Y | 0.25 | |
| Y1 | 0.70 | |
2411212332_Siliup-MMBT3906NC_C41355100.pdf
Related Products
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
