40V P Channel MOSFET Siliup SP40P25TH Featuring Low Gate Charge and High Avalanche Energy Capability
Key Attributes
Model Number:
SP40P25TH
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@10V;35mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
102pF
Number:
1 P-Channel
Output Capacitance(Coss):
134pF
Pd - Power Dissipation:
40W
Input Capacitance(Ciss):
1.415nF
Gate Charge(Qg):
11.5nC@4.5V
Mfr. Part #:
SP40P25TH
Package:
TO-252
Product Description
Product Overview
The SP40P25TH is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for applications such as DC-DC converters and load switching. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40P25TH
- Device Code: 40P25
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -40 | V | |||
| RDS(on) | @-10V | 25 | 35 | m | ||
| RDS(on) | @-4.5V | 35 | m | |||
| Continuous Drain Current | ID | -15 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (TC=25) | ID | -15 | A | |||
| Continuous Drain Current (TC=100) | ID | -10 | A | |||
| Pulsed Drain Current | IDM | -60 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 60 | mJ | |||
| Power Dissipation (TC=25) | PD | 40 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 3.13 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -40 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-32V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-15A | 25 | 35 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-10A | 35 | 45 | m | |
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | 1415 | pF | ||
| Output Capacitance | Coss | 134 | pF | |||
| Reverse Transfer Capacitance | Crss | 102 | pF | |||
| Total Gate Charge | Qg | VDS=-15V , VGS=-4.5V , ID=-1A | 11.5 | nC | ||
| Gate-Source Charge | Qgs | 3.5 | nC | |||
| Gate-Drain Charge | Qgd | 3.3 | nC | |||
| Turn-On Delay Time | Td(on) | VDD=-15V,VGS=-10V,RG=3.3, ID=-1A | 22 | nS | ||
| Rise Time | Tr | 15.7 | nS | |||
| Turn-Off Delay Time | Td(off) | 59 | nS | |||
| Fall Time | Tf | 5.5 | nS | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -15 | A | |||
| Reverse Recovery Time | Trr | IS=-15A, di/dt=-100A/us, Tj=25 | 28 | nS | ||
| Reverse Recovery Charge | Qrr | 36 | nC | |||
| Package Information | ||||||
| Package Type | TO-252 | |||||
| Pinout | (1:G 2:D 3:S) | |||||
| Order Information | SP40P25TH | |||||
| Unit/Tape | 2500 | |||||
2504101957_Siliup-SP40P25TH_C41355200.pdf
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