Power Management 30V N Channel MOSFET Siliup SP30N03BNK with Fast Switching and Surface Mount Package

Key Attributes
Model Number: SP30N03BNK
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
85A
RDS(on):
3.3mΩ@10V;5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
230pF
Number:
1 N-channel
Output Capacitance(Coss):
250pF
Input Capacitance(Ciss):
2.01nF
Pd - Power Dissipation:
48W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
SP30N03BNK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP30N03BNK is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds and a surface mount package. This ROHS Compliant & Halogen-Free component is 100% Single Pulse avalanche energy tested, making it suitable for demanding applications such as DC-DC converters and motor control.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP30N03BNK
  • Channel Type: N-Channel MOSFET
  • Compliance: ROHS Compliant & Halogen-Free
  • Testing: 100% Single Pulse avalanche energy Test
  • Package Type: PDFN5X6-8L

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 30 V
RDS(on)TYP @10V 3.3 m
RDS(on)TYP @4.5V 5 m
Continuous Drain Current ID 85 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID (Ta=25) 85 A
Continuous Drain Current ID (Tc=100C) 56 A
Pulse Drain Current IDM Tested 340 A
Single pulsed avalanche energy EAS 225 mJ
Power Dissipation PD (Tc=25C) 48 W
Thermal Resistance Junction-to-Case RJC 2.6 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 33.5 - V
Drain-Source Leakage Current IDSS VDS=24V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID =20A - 3.3 4.2 m
Static Drain-Source On-Resistance RDS(ON) VGS =4.5V, ID =10A - 5 7 m
Input Capacitance Ciss VDS=10V , VGS=0V , f=1MHz - 2010 - pF
Output Capacitance Coss - 250 - pF
Reverse Transfer Capacitance Crss - 230 - pF
Total Gate Charge Qg VDS=15V , VGS=10V , ID=30A - 60 - nC
Gate-Source Charge Qgs - 8.2 -
Gate-Drain Charge Qg d - 7.4 -
Turn-On Delay Time Td(on) VDD=15 VGS=10V , RG=3, ID=20A - 12 - nS
Rise Time Tr - 15 -
Turn-Off Delay Time Td(off) - 40 - nS
Fall Time Tf - 14 -
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Diode Continuous Current IS - - 85 A
Reverse recover time Trr IS=20A, di/dt=100A/us, Tj=25 - 11 - nS
Reverse recovery charge Qrr - 3 - nC
Package Dimensions (PDFN5X6-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.900 - 1.000 0.035 - 0.039
A3 0.254REF. 0.010REF.
D 4.944 - 5.096 0.195 - 0.201
E 5.974 - 6.126 0.235 - 0.241
D1 3.910 - 4.110 0.154 - 0.162
E1 3.375 - 3.575 0.133 - 0.141
D2 4.824 - 4.976 0.190 - 0.196
E2 5.674 - 5.826 0.223 - 0.229
k 1.190 - 1.390 0.047 - 0.055
b 0.350 - 0.450 0.014 - 0.018
e 1.270TYP. 0.050TYP.
L 0.559 - 0.711 0.022 - 0.028
L1 0.424 - 0.576 0.017 - 0.023
H 0.574 - 0.726 0.023 - 0.029
10 - 12 10 - 12

2504101957_Siliup-SP30N03BNK_C41354860.pdf

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