Power Switching MOSFET Siliup SP20N03TH 20V N Channel Device with Low RDS on and Fast Switching Speed
Key Attributes
Model Number:
SP20N03TH
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.8mΩ@4.5V;3.3mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
850mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
333pF
Number:
1 N-channel
Output Capacitance(Coss):
701pF
Pd - Power Dissipation:
45W
Input Capacitance(Ciss):
3.935nF
Gate Charge(Qg):
65nC@4.5V
Mfr. Part #:
SP20N03TH
Package:
TO-252-2L
Product Description
Product Overview
The SP20N03TH is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for high-frequency switching and synchronous rectification, this MOSFET features fast switching speeds, low gate charge, and low RDS(on). It is ideal for DC-DC converter applications and is 100% tested for single-pulse avalanche energy. The device is supplied in a TO-252 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP20N03TH
- Device Type: N-Channel MOSFET
- Voltage Rating: 20V
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 20 | V | ||||
| RDS(on) | @4.5V | 2.8 | m | |||
| RDS(on) | @2.5V | 3.3 | m | |||
| ID | 100 | A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | (TC=25) | 100 | A | ||
| Continuous Drain Current | ID | (TC=100) | 66 | A | ||
| Pulsed Drain Current | IDM | 400 | A | |||
| Single Pulse Avalanche Energy | EAS | 205 | mJ | |||
| Power Dissipation | PD | (TC=25) | 45 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 2.8 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V, VGS=0V, TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=10V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =250uA | 0.5 | 0.85 | 1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=20A | - | 2.8 | 4.5 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V, ID=15A | - | 3.3 | 5.0 | m |
| Input Capacitance | Ciss | VDS=10V, VGS=0V, f=1MHz | - | 3935 | - | pF |
| Output Capacitance | Coss | - | 701 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 333 | - | pF | |
| Total Gate Charge | Qg | VGS=4.5V,VDS=10V,ID=30A | - | 65 | - | nC |
| Gate-Source Charge | Qgs | - | 8 | - | nC | |
| Gate-Drain Charge | Qgd | - | 11 | - | nC | |
| Turn-On Delay Time | Td(on) | VGS=10V,VDD=10V, ID=30A,RG=3 | - | 7 | - | nS |
| Rise Time | Tr | - | 19 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 72 | - | nS | |
| Fall Time | Tf | - | 68 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 100 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 16 | - | nS |
| Reverse Recovery Charge | Qrr | - | 5.6 | - | nC | |
| TO-252 Package Information (Dimensions in Millimeters) | |||
|---|---|---|---|
| Symbol | Min. | Max. | REF. |
| A | 2.200 | 2.400 | |
| A1 | 0.000 | 0.127 | |
| b | 0.660 | 0.860 | |
| c | 0.460 | 0.580 | |
| D | 6.500 | 6.700 | |
| D1 | 5.100 | 5.460 | |
| D2 | 4.830 | ||
| E | 6.000 | 6.200 | |
| e | 2.186 | 2.386 | |
| L | 9.800 | 10.400 | |
| L1 | 2.900 | ||
| L2 | 1.400 | 1.700 | |
| L3 | 1.600 | ||
| L4 | 0.600 | 1.000 | |
| 1.100 | 1.300 | ||
| 0 | 8 | ||
| h | 0.000 | 0.300 | |
| V | 5.350 | ||
2504101957_Siliup-SP20N03TH_C41354837.pdf
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