Low RDSon 100V N Channel Power MOSFET Siliup SP010N01AGHTO Designed for Hard Switched and PWM Power Circuits
Key Attributes
Model Number:
SP010N01AGHTO
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
430A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
353pF
Number:
1 N-channel
Pd - Power Dissipation:
465W
Output Capacitance(Coss):
5.288nF
Input Capacitance(Ciss):
12.142nF
Gate Charge(Qg):
218nC@10V
Mfr. Part #:
SP010N01AGHTO
Package:
TOLL
Product Description
Product Overview
The SP010N01AGHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management. The device is available in a TOLL package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N01AGHTO
- Technology: Advanced Split Gate Trench Technology
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| Drain-Source ON Resistance | RDS(on)TYP | @10V | 0.95 | m | ||
| Continuous Drain Current | ID | 430 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | 100 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (Tc=25) | 430 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 290 | A | ||
| Pulsed Drain Current | IDM | 1720 | A | |||
| Single Pulse Avalanche Energy | EAS | 2601 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 465 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.27 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | 110 | - | V |
| Drain Cut-Off Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 | 3 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=50A | - | 0.95 | 1.2 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 12142 | - | pF |
| Output Capacitance | Coss | - | 5288 | - | ||
| Reverse Transfer Capacitance | Crss | - | 353 | - | ||
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=125A | - | 218 | - | nC |
| Gate-Source Charge | Qgs | - | 66 | - | ||
| Gate-Drain Charge | Qgd | - | 57 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=50V, VGS=10V , RG=1.6, ID=125A | - | 43 | - | nS |
| Rise Time | tr | - | 71 | - | ||
| Turn-Off Delay Time | td(off) | - | 149 | - | ||
| Fall Time | tf | - | 89 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 430 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 136 | - | nS |
| Reverse Recovery Charge | Qrr | - | 380 | - | nC | |
| TOLL Package Information (Dimensions in Millimeters) | ||||||
| Symbol | Dimensions | Min. | Nom. | Max. | ||
| A | 2.20 | 2.30 | 2.40 | |||
| b | 0.65 | 0.75 | 0.85 | |||
| C | 0.508 | REF | ||||
| D | 10.25 | 10.40 | 10.55 | |||
| D1 | 2.85 | 3.00 | 3.15 | |||
| E | 9.75 | 9.90 | 10.05 | |||
| E1 | 9.65 | 9.80 | 9.95 | |||
| E2 | 8.95 | 9.10 | 9.25 | |||
| E3 | 7.25 | 7.40 | 7.55 | |||
| e | 1.20 | BSC | ||||
| F | 1.05 | 1.20 | 1.35 | |||
| H | 11.55 | 11.70 | 11.85 | |||
| H1 | 6.03 | 6.18 | 6.33 | |||
| H2 | 6.85 | 7.00 | 7.15 | |||
| H3 | 3.00 | BSC | ||||
| L | 1.55 | 1.70 | 1.85 | |||
| L1 | 0.55 | 0.7 | 0.85 | |||
| L2 | 0.45 | 0.6 | 0.75 | |||
| M | 0.08 | REF. | ||||
| 8 | 10 | 12 | ||||
| K | 4.25 | 4.40 | 4.55 | |||
2504101957_Siliup-SP010N01AGHTO_C42460868.pdf
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