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quality N Channel Power MOSFET SP40N03GNJ Featuring Tested Single Pulse Avalanche Energy and Low Gate Charge factory
quality N Channel Power MOSFET SP40N03GNJ Featuring Tested Single Pulse Avalanche Energy and Low Gate Charge factory

N Channel Power MOSFET SP40N03GNJ Featuring Tested Single Pulse Avalanche Energy and Low Gate Charge

Key Attributes
Model Number: SP40N03GNJ
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
75A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.9mΩ@10V;4.2mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
31pF
Number:
1 N-channel
Output Capacitance(Coss):
395pF
Input Capacitance(Ciss):
1.675nF
Pd - Power Dissipation:
55W
Gate Charge(Qg):
26nC@20V
Mfr. Part #:
SP40N03GNJ
Package:
PDFN-8L(3x3)
Product Description

Product Overview

The SP40N03GNJ is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., engineered for high-efficiency applications. It features fast switching speeds, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for DC-DC converters, motor control, and portable equipment applications.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP40N03GNJ
  • Technology: Advanced Split Gate Trench
  • Channel Type: N-Channel
  • Package: PDFN3X3-8L

Technical Specifications

Parameter Symbol Conditions Rating Unit
Drain-Source Breakdown Voltage V(BR)DSS - 40 V
RDS(on) Typ. (at 10V Gate Drive) RDS(on)TYP VGS=10V 2.9 m
RDS(on) Typ. (at 4.5V Gate Drive) RDS(on)TYP VGS=4.5V 4.2 m
Continuous Drain Current ID Tc=25C 75 A
Pulse Drain Current IDM Tested 300 A
Single Pulsed Avalanche Energy EAS - 169 mJ
Power Dissipation PD Tc=25C 55 W
Thermal Resistance Junction-to-Case RJC - 2.27 C/W
Storage Temperature Range TSTG - -55 to 150 C
Operating Junction Temperature Range TJ - -55 to 150 C
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 V
Drain-Source Leakage Current IDSS VDS=32V , VGS=0V , TJ=25 - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 - 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID =20A - 3.7 m
Static Drain-Source On-Resistance RDS(ON) VGS =4.5V, ID =10A - 5.6 m
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz - 1675 pF
Output Capacitance Coss - - 395 pF
Reverse Transfer Capacitance Crss - - 31 pF
Total Gate Charge Qg VDS=20V , VGS=20V , ID=30A - 26 nC
Gate-Source Charge Qgs - - 8 -
Gate-Drain Charge Qg d - - 5.5 -
Turn-On Delay Time Td(on) VDD=20 VGS=20V , RG=3, ID=30A - 8 nS
Rise Time Tr - - 5 -
Turn-Off Delay Time Td(off) - - 32 -
Fall Time Tf - - 6.5 -
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - 1.2 V
Diode Continuous Current IS - - 75 A
Reverse recover time Trr IS=20A, di/dt=100A/us, Tj=25 - 14 nS
Reverse recovery charge Qrr - - 23 nC

Note: 1. The EAS Test condition is VDD=20V,VGS =10V,L = 0.5mH, Rg=25

Device Code: 40N03G

Order Information: SP40N03GNJ in PDFN3X3-8L package, 5000 units/tape.


2504101957_Siliup-SP40N03GNJ_C22466709.pdf

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