20V N Channel MOSFET Siliup SP2002KT5 with Low RDSon and High Current Handling Capability
Key Attributes
Model Number:
SP2002KT5
Product Custom Attributes
Pd - Power Dissipation:
150mW
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
250mΩ@4.5V;350mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 N-channel
Output Capacitance(Coss):
19pF
Input Capacitance(Ciss):
35pF
Gate Charge(Qg):
800pC@4.5V
Mfr. Part #:
SP2002KT5
Package:
SOT-523
Product Description
Product Overview
The SP2002KT5 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface mount device features ESD protection (2KV) and is suitable for applications such as battery switches and DC/DC converters. It offers a low RDS(on) at various gate-source voltages.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Package: SOT-523
- ESD Protected: 2KV
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 20 | V | |||
| RDS(on) | @4.5V | 250 | m | |||
| @2.5V | 350 | m | ||||
| Continuous Drain Current | ID | 0.75 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | 0.75 | A | |||
| Pulse Drain Current | IDM | Tested | 3 | A | ||
| Power Dissipation | PD | 150 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 833 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.30 | 0.65 | 1.00 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=500mA | - | 250 | 380 | m |
| VGS=2.5V , ID=200mA | - | 350 | 450 | m | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 35 | - | pF |
| Output Capacitance | Coss | - | 19 | - | ||
| Reverse Transfer Capacitance | Crss | - | 9 | - | ||
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=500mA | - | 0.8 | - | nC |
| Gate-Source Charge | Qgs | - | 0.3 | - | ||
| Gate-Drain Charge | Qg d | - | 0.16 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=10V VGS=4.5V , RG=10 , ID=500mA | - | 4 | - | nS |
| Turn-On Rise Time | tr | - | 19 | - | ||
| Turn-Off Delay Time | td(off) | - | 10 | - | ||
| Turn-Off Fall Time | tf | - | 21 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-523) | ||||||
| Symbol | Dimensions In Millimeters | Min | Max | |||
| A | 0.700 | 0.900 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 0.700 | 0.800 | ||||
| b1 | 0.150 | 0.250 | ||||
| b2 | 0.250 | 0.350 | ||||
| C | 0.100 | 0.200 | ||||
| D | 1.500 | 1.700 | ||||
| E | 0.700 | 0.900 | ||||
| E1 | 1.450 | 1.750 | ||||
| e | 0.500 TYP | |||||
| e1 | 0.900 | 1.100 | ||||
| L | 0.400 REF | |||||
| L1 | 0.260 | 0.460 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP2002KT5_C41354897.pdf
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