SOD323 Package Silicon Planar Zener Diode Shikues MM3Z8V2B Voltage Regulation Electronic Component
Key Attributes
Model Number:
MM3Z8V2B
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Reverse Leakage Current (Ir):
500nA
Pd - Power Dissipation:
300mW
Impedance(Zzt):
30Ω
Diode Configuration:
Independent
Zener Voltage(Range):
8.04V~8.36V
Zener Voltage(Nom):
8.2V
Mfr. Part #:
MM3Z8V2B
Package:
SOD-323
Product Description
Product Overview
Silicon Planar Zener Diodes in a small plastic SOD-323 package suitable for surface mounted designs. Offering a wide zener reverse voltage range from 2.0V to 75V with a tolerance of approximately 2%. Ideal for various electronic applications requiring precise voltage regulation.
Product Attributes
- Case: SOD-323
- Terminals: Solderable per MIL-STD-750, Method 2026
- Approx. Weight: 5.48mg / 0.00019oz
Technical Specifications
| Type | Marking | Zener Voltage Range (V) Nom | Zener Voltage (VZT) at IZT (mA) Nom | Dynamic Impedance (ZZT) at IZT Max () | Reverse Current (IR) at VR Max (A) |
| MM3Z2V0B | 0B | 2.0 | 100 | 120 | 0.5 |
| MM3Z2V2B | 0C | 2.2 | 100 | 120 | 0.5 |
| MM3Z2V4B | C1 | 2.4 | 100 | 120 | 0.5 |
| MM3Z2V7B | D1 | 2.7 | 110 | 120 | 0.5 |
| MM3Z3V0B | E1 | 3.0 | 120 | 120 | 0.5 |
| MM3Z3V3B | F1 | 3.3 | 130 | 120 | 0.5 |
| MM3Z3V6B | H1 | 3.6 | 130 | 120 | 0.5 |
| MM3Z3V9B | J1 | 3.9 | 130 | 120 | 0.5 |
| MM3Z4V3B | K1 | 4.3 | 130 | 120 | 0.5 |
| MM3Z4V7B | M1 | 4.7 | 130 | 120 | 0.5 |
| MM3Z5V1B | N1 | 5.1 | 130 | 120 | 0.5 |
| MM3Z5V6B | P1 | 5.6 | 80 | 120 | 0.5 |
| MM3Z6V2B | R1 | 6.2 | 50 | 120 | 0.5 |
| MM3Z6V8B | X1 | 6.8 | 30 | 120 | 0.5 |
| MM3Z7V5B | Y1 | 7.5 | 30 | 120 | 0.5 |
| MM3Z8V2B | Z1 | 8.2 | 30 | 120 | 0.5 |
| MM3Z9V1B | A2 | 9.1 | 30 | 120 | 0.5 |
| MM3Z10B | B2 | 10 | 30 | 120 | 0.5 |
| MM3Z11B | C2 | 11 | 35 | 120 | 0.5 |
| MM3Z12B | D2 | 12 | 35 | 120 | 0.5 |
| MM3Z13B | E2 | 13 | 40 | 120 | 0.5 |
| MM3Z15B | F2 | 15 | 40 | 120 | 0.5 |
| MM3Z16B | H2 | 16 | 45 | 120 | 0.5 |
| MM3Z18B | J2 | 18 | 50 | 120 | 0.5 |
| MM3Z20B | K2 | 20 | 55 | 120 | 0.5 |
| MM3Z22B | M2 | 22 | 60 | 120 | 0.5 |
| MM3Z24B | N2 | 24 | 70 | 120 | 0.5 |
| MM3Z27B | P2 | 27 | 80 | 120 | 0.5 |
| MM3Z30B | R2 | 30 | 80 | 120 | 0.5 |
| MM3Z33B | X2 | 33 | 90 | 120 | 0.5 |
| MM3Z36B | Y2 | 36 | 100 | 120 | 0.5 |
| MM3Z39B | Z2 | 39 | 130 | 120 | 0.5 |
| MM3Z43B | A3 | 43 | 150 | 120 | 0.5 |
| MM3Z47B | B3 | 47 | 180 | 120 | 0.5 |
| MM3Z51B | C3 | 51 | 200 | 120 | 0.5 |
| MM3Z56B | D3 | 56 | 215 | 120 | 0.5 |
| MM3Z62B | E3 | 62 | 240 | 120 | 0.5 |
| MM3Z68B | F3 | 68 | 265 | 120 | 0.5 |
| MM3Z75B | H3 | 75 | 120 | 120 | 0.5 |
| Parameter | Symbol | Value | Unit | Notes |
| Power Dissipation | Ptot | 300 | mW | Ta = 25 C |
| Operating and Storage Temperature Range | Tj, Tstg | -55 ~ +150 | C | |
| Forward Voltage at IF = 10 mA | VF | 0.9 | V | |
| Typical thermal resistance junction to ambient | RJA | 417 | C/W | P.C.B. mounted with 2 oz copper areas pads |
2410121815_Shikues-MM3Z8V2B_C5356496.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
