Low RDSon 150V N Channel MOSFET Siliup SP015N03BGHTO Designed for Power Management and PWM Circuits
Key Attributes
Model Number:
SP015N03BGHTO
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
260A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
21pF
Number:
1 N-channel
Input Capacitance(Ciss):
8.538nF
Output Capacitance(Coss):
772pF
Pd - Power Dissipation:
625W
Gate Charge(Qg):
122nC@10V
Mfr. Part #:
SP015N03BGHTO
Package:
TOLL-8L
Product Description
Product Overview
The SP015N03BGHTO is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-performance applications, it features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard-switched, and high-frequency circuits, as well as power management solutions.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP015N03BGHTO
- Technology: Advanced Split Gate Trench Technology
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 150 | V | ||||
| RDS(on)TYP | @10V | 3.3 | m | |||
| ID | 260 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25,unless otherwise noted) | 150 | V | ||
| Gate-Source Voltage | VGS | (Ta=25,unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 260 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 173 | A | ||
| Pulsed Drain Current | IDM | 1040 | A | |||
| Single Pulse Avalanche Energy | EAS | 1681 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 625 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.2 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 150 | 170 | - | V |
| Drain-Source Leakage Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 3.3 | 3.8 | m |
| Input Capacitance | Ciss | VDS=75V , VGS=0V , f=1MHz | - | 8538 | - | pF |
| Output Capacitance | Coss | - | 772 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 21 | - | pF | |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=20A | - | 122 | - | nC |
| Gate-Source Charge | Qgs | - | 48 | - | nC | |
| Gate-Drain Charge | Qgd | - | 33 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=75V, VGS=10V , RG=3.0, ID=20A | - | 33 | - | nS |
| Rise Time | Tr | - | 59 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 89 | - | nS | |
| Fall Time | Tf | - | 48 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 260 | A | |
| Reverse Recovery Time | Trr | IS=15A, di/dt=100A/us, TJ=25 | - | 112 | - | nS |
| Reverse Recovery Charge | Qrr | - | 426 | - | nC | |
| Package Information (TOLL) | ||||||
| Symbol | Dimensions (mm) Min. | Dimensions (mm) Nom. | Dimensions (mm) Max. | |||
| A | 2.20 | 2.30 | 2.40 | |||
| b | 0.65 | 0.75 | 0.85 | |||
| C | 0.508 | |||||
| D | 10.25 | 10.40 | 10.55 | |||
| D1 | 2.85 | 3.00 | 3.15 | |||
| E | 9.75 | 9.90 | 10.05 | |||
| E1 | 9.65 | 9.80 | 9.95 | |||
| E2 | 8.95 | 9.10 | 9.25 | |||
| E3 | 7.25 | 7.40 | 7.55 | |||
| e | 1.20 BSC | |||||
| F | 1.05 | 1.20 | 1.35 | |||
| H | 11.55 | 11.70 | 11.85 | |||
| H1 | 6.03 | 6.18 | 6.33 | |||
| H2 | 6.85 | 7.00 | 7.15 | |||
| H3 | 3.00 BSC | |||||
| L | 1.55 | 1.70 | 1.85 | |||
| L1 | 0.55 | 0.7 | 0.85 | |||
| L2 | 0.45 | 0.6 | 0.75 | |||
| M | 0.08 REF. | |||||
| 8 | 10 | 12 | ||||
| K | 4.25 | 4.40 | 4.55 | |||
Note: Single Pulse Avalanche Energy test condition: VDD=50V, VGS=10V, L=0.5mH, RG=25.
Order Information:
| Device | Package | Unit/Tape |
|---|---|---|
| SP015N03BGHTO | TOLL | 2000 |
Marking: 015N03BGH : Product code * : Month code
2504101957_Siliup-SP015N03BGHTO_C22385354.pdf
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