Shenzhen ruichips Semicon RU6099S-R N Channel MOSFET with ultra low on resistance and fast switching
Key Attributes
Model Number:
RU6099S-R
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-
RDS(on):
6mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
240pF
Number:
1 N-channel
Output Capacitance(Coss):
430pF
Input Capacitance(Ciss):
3nF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
RU6099S-R
Package:
TO-263
Product Description
Product Overview
The RU6099S is an N-Channel Advanced Power MOSFET from Ruichips Semiconductor, designed for high-performance switching applications. It features ultra-low on-resistance, exceptional dv/dt capability, and fast switching with full avalanche rating. This device is 100% avalanche tested and operates at temperatures up to 175C, making it suitable for demanding systems like switching and inverter applications. Lead-free and green options are available.
Product Attributes
- Brand: Ruichips Semiconductor
- Model: RU6099S
- Package: TO263
- Origin: CHINA
- Certifications: Lead Free and Green Available
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Common Ratings (TC=25C Unless Otherwise Noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250A | 60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 2 | 3 | 4 | V |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, IDS=40A | 6 | 7 | m | |
| Diode Forward Voltage | VSD | ISD=40A, VGS=0V | 1.2 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1 | A | ||
| Diode Continuous Forward Current | IS | TC=25C | 120 | A | ||
| Diode Continuous Forward Current | IS | TC=100C | 90 | A | ||
| Drain Current | ID | TC=25C, VGS=10V | 120 | A | ||
| Drain Current | ID | TC=100C, VGS=10V | 90 | A | ||
| Pulsed Drain Current | IDP | TC=25C | 380 | A | ||
| Maximum Power Dissipation | PD | Mounted on Large Heat Sink, TC=25C | 150 | W | ||
| Maximum Power Dissipation | PD | Mounted on Large Heat Sink, TC=100C | 75 | W | ||
| Thermal Resistance-Junction to Case | RJC | 1 | C/W | |||
| Thermal Resistance-Junction to Ambient | RJA | 62.5 | C/W | |||
| Avalanche Energy, Single Pulsed | EAS | 625 | mJ | |||
| Dynamic Characteristics (TC=25C Unless Otherwise Noted) | ||||||
| Input Capacitance | Ciss | VGS=0V,VDS=30V,F=1MHz | 3000 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=30V, Frequency=1.0MHz | 430 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V,VDS=0V,F=1MHz | 240 | pF | ||
| Turn-on Delay Time | td(ON) | VDD=30V, RL=30, IDS=1A, VGEN=10V, RG=8 | 14 | ns | ||
| Turn-on Rise Time | tr | VDD=30V, RL=30, IDS=1A, VGEN=10V, RG=8 | 17 | ns | ||
| Turn-off Delay Time | td(OFF) | VDD=30V, RL=30, IDS=1A, VGEN=10V, RG=8 | 40 | ns | ||
| Turn-off Fall Time | tf | VDD=30V, RL=30, IDS=1A, VGEN=10V, RG=8 | 62 | ns | ||
| Total Gate Charge | Qg | VDS=30V, IDS=40A | 72 | nC | ||
| Gate-Source Charge | Qgs | VDS=30V, IDS=40A | 13 | nC | ||
| Gate-Drain Charge | Qgd | VDS=30V, IDS=40A | 24 | nC | ||
| Diode Characteristics (TC=25C Unless Otherwise Noted) | ||||||
| Reverse Recovery Time | trr | ISD=40A, dlSD/dt=100A/s | 50 | ns | ||
| Reverse Recovery Charge | Qrr | ISD=40A, dlSD/dt=100A/s | 95 | nC | ||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 25 | V | |||
| Maximum Junction Temperature | TJ | 175 | C | |||
| Storage Temperature Range | TSTG | -55 | 175 | C | ||
2410122017_Shenzhen-ruichips-Semicon-RU6099S-R_C2803367.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
