Siliup SP80N120CTK Silicon Carbide MOSFET Suitable for Photovoltaic Inverters and Switch Mode Power Supplies
Key Attributes
Model Number:
SP80N120CTK
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+175℃
RDS(on):
13mΩ@18V
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
29pF
Input Capacitance(Ciss):
3.815nF
Pd - Power Dissipation:
450W
Output Capacitance(Coss):
239pF
Gate Charge(Qg):
216nC
Mfr. Part #:
SP80N120CTK
Package:
TO-247-4L
Product Description
Product Overview
The SP80N120CTK is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-speed switching applications, it offers a low on-resistance (RDS(on)TYP of 13m@18V) and high blocking voltage. Its characteristics, including easy paralleling and simple driving, make it suitable for demanding applications such as power factor correction modules, switch mode power supplies, photovoltaic inverters, UPS power supplies, and high voltage DC/DC converters. This device is RoHS compliant.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Material: Silicon Carbide (SiC)
- Certification: RoHS Compliant
- Device Code: SP80N120CTK
- Package: TO-247-4L (1-Drain; 2-Source; 3-Kelvin Source; 4-Gate)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 1200 | V | |||
| Gate-Source Voltage | VGSMAX | -10/+22 | V | |||
| Recommended Gate-Source Voltage | VGSop | -5/+18 | V | |||
| Continuous Drain Current (Tc=25) | ID | 120 | A | |||
| Continuous Drain Current (Tc=100) | ID | 80 | A | |||
| Pulsed Drain Current | IDM | 240 | A | |||
| Single Pulse Avalanche Energy | EAS | 1892 | mJ | |||
| Power Dissipation (Tc=25) | PD | 450 | W | |||
| Power Dissipation (Tc=100) | PD | 245 | W | |||
| Thermal Resistance Junction-Case | RJC | 0.3 | /W | |||
| Storage Temperature Range | TSTG | -55 | 175 | |||
| Operating Junction Temperature Range | TJ | -55 | 175 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 1200 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=1200V , VGS=0V , TJ=25 | - | 1 | 100 | uA |
| Gate-Source Leakage Current | IGSS | VGS= -5~+18V , VDS=0V | - | 1 | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =20mA, Tj=25 | 2 | 2.5 | 4 | V |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =20mA, Tj=175 | - | 1.9 | - | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V , ID=70A, Tj=25 | - | 13 | 19 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V , ID=70A, Tj=175 | - | 20 | - | m |
| Input Capacitance | Ciss | VDS=800V , VGS=0V , f=1MHz | - | 3815 | - | pF |
| Output Capacitance | Coss | - | 239 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 29 | - | pF | |
| Total Gate Charge | Qg | VDS=800V , VGS= -5/+18V , ID=70A | - | 216 | - | nC |
| Gate-Source Charge | Qgs | - | 46 | - | nC | |
| Gate-Drain Charge | Qgd | - | 100 | - | nC | |
| Turn-On Delay Time | Td(on) | VDS=800V , VGS= -5/+18V , ID=70A, RG=4.5 | - | 15 | - | nS |
| Rise Time | Tr | - | 70 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 82 | - | nS | |
| Fall Time | Tf | - | 27 | - | nS | |
| Turn-On Energy | Eon | - | 2483 | - | J | |
| Turn-Off Energy | Eoff | - | 1669 | - | J | |
| Total Switching Loss | Etot | - | 4152 | - | J | |
| Reverse Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS= -5V , ISD=37.5A , TJ=25 | - | 4.0 | - | V |
| Diode Forward Voltage | VSD | VGS= -5V , ISD=37.5A , TJ=175 | - | 3.5 | - | V |
| Reverse Recovery Time | trr | VGS=-5V/+18V, ISD=70A, VR=800V, di/dt=1000A/s | - | 75 | - | nS |
| Reverse Recovery Charge | Qrr | - | 2080 | - | nC | |
| Peak Reverse Recovery Current | Irrm | - | 45 | - | A | |
Note: The test condition for switching characteristics is VDD=50V, VGS=10V, L=0.5mH, RG=25.
Package Information (TO-247-4L):
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.83 | 5.21 | 0.19 | 0.21 |
| A1 | 2.29 | 2.54 | 0.09 | 0.10 |
| A2 | 1.91 | 2.16 | 0.08 | 0.09 |
| b1 | 2.39 | 2.94 | 0.09 | 0.12 |
| b3 | 1.07 | 1.60 | 0.04 | 0.06 |
| b5 | 2.39 | 2.69 | 0.09 | 0.11 |
| c | 0.55 | 0.68 | 0.02 | 0.03 |
| D | 23.30 | 23.60 | 0.92 | 0.93 |
| D1 | 16.25 | 17.65 | 0.64 | 0.69 |
| D2 | 0.95 | 1.25 | 0.04 | 0.05 |
| E | 15.75 | 16.13 | 0.62 | 0.64 |
| E1 | 13.10 | 14.15 | 0.52 | 0.56 |
| E2 | 3.68 | 5.10 | 0.14 | 0.20 |
| E3 | 1.00 | 1.90 | 0.04 | 0.07 |
| E4 | 12.38 | 13.43 | 0.49 | 0.53 |
| e | 2.54 BSC | 0.1 BSC | ||
| e1 | 5.08 BSC | 0.2 BSC | ||
| L | 17.31 | 17.82 | 0.68 | 0.70 |
| L1 | 3.97 | 4.37 | 0.16 | 0.17 |
| L2 | 2.35 | 2.65 | 0.09 | 0.10 |
| P | 3.51 | 3.65 | 0.14 | 0.14 |
| Q | 5.49 | 6.00 | 0.22 | 0.24 |
| S | 6.04 | 6.30 | 0.24 | 0.25 |
| T | 17.5 REF. | 0.69 REF. | ||
| W | 3.5 REF. | 0.14 REF. | ||
| X | 4.0 REF. | 0.16 REF. |
2504101957_Siliup-SP80N120CTK_C45351240.pdf
Related Products
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
