Low On Resistance N Channel MOSFET Shenzhen ruichips Semicon RU8590S with High Temperature Capability
Key Attributes
Model Number:
RU8590S
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-
RDS(on):
5.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
275pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.35nF
Output Capacitance(Coss):
480pF
Pd - Power Dissipation:
188W
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
RU8590S
Package:
TO-263
Product Description
The RU8590S is an N-Channel Advanced Power MOSFET designed for high-speed power switching applications. It features ultra-low on-resistance, fast switching, and is fully avalanche rated, making it suitable for demanding applications. The device operates at high temperatures up to 175C and is available in lead-free and green (RoHS compliant) versions.
Product Attributes
- Brand: Ruichips Semiconductor Co., Ltd
- Product Name: RU8590S
- Package: TO263
- Certifications: Lead Free and Green Devices Available (RoHS Compliant)
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250A | 85 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 2 | 4 | V | |
| Gate Leakage Current | IGSS | VGS=25V, VDS=0V | 100 | nA | ||
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, IDS=45A | 5.8 | 8 | m | |
| Zero Gate Voltage Drain Current | IDSS | VDS=85V, VGS=0V | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=85V, VGS=0V, TJ=125C | 30 | A | ||
| Diode Forward Voltage | VSD | ISD=45A, VGS=0V | 1.2 | V | ||
| Reverse Recovery Time | trr | ISD=45A, dlSD/dt=100A/s | 29 | ns | ||
| Reverse Recovery Charge | Qrr | ISD=45A, dlSD/dt=100A/s | 45 | nC | ||
| Input Capacitance | Ciss | VGS=0V, VDS=40V, Frequency=1.0MHz | 4350 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=0V, F=1MHz | 480 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=0V, F=1MHz | 275 | pF | ||
| Turn-on Delay Time | td(ON) | VDD=40V,IDS=45A, VGEN=10V,RG=0.8 | 25 | ns | ||
| Turn-on Rise Time | tr | VDD=40V,IDS=45A, VGEN=10V,RG=0.8 | 49 | ns | ||
| Turn-off Delay Time | td(OFF) | VDD=40V,IDS=45A, VGEN=10V,RG=0.8 | 121 | ns | ||
| Turn-off Fall Time | tf | VDD=40V,IDS=45A, VGEN=10V,RG=0.8 | 17 | ns | ||
| Total Gate Charge | Qg | VDS=68V, VGS=10V, IDS=45A | 48 | nC | ||
| Gate-Source Charge | Qgs | VDS=68V, VGS=10V, IDS=45A | 13 | nC | ||
| Gate-Drain Charge | Qgd | VDS=68V, VGS=10V, IDS=45A | 16 | nC | ||
| Drain-Source Voltage | VDSS | 85 | V | |||
| Gate-Source Voltage | VGSS | 25 | V | |||
| Maximum Junction Temperature | TJ | 175 | C | |||
| Storage Temperature Range | TSTG | -55 | 175 | C | ||
| Diode Continuous Forward Current | IS | TC=25C | 90 | A | ||
| Pulse Drain Current | IDP | TC=25C | 360 | A | ||
| Tested Continuous Drain Current(VGS=10V) | ID | TC=25C | 90 | A | ||
| Tested Continuous Drain Current(VGS=10V) | ID | TC=100C | 64 | A | ||
| Maximum Power Dissipation | PD | Mounted on Large Heat Sink, TC=25C | 188 | W | ||
| Maximum Power Dissipation | PD | Mounted on Large Heat Sink, TC=100C | 94 | W | ||
| Thermal Resistance-Junction to Case | RJC | 0.8 | C/W | |||
| Thermal Resistance-Junction to Ambient | RJA | Mounted on Large Heat Sink | 62.5 | C/W | ||
| Avalanche Energy, Single Pulsed | EAS | 306 | mJ | |||
| Gate Resistance | RG | 1.3 |
2410122015_Shenzhen-ruichips-Semicon-RU8590S_C181993.pdf
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