20V P Channel MOSFET Siliup SP2305AT2 with Continuous Drain Current of 4.7A in Compact SOT 23 Package
Key Attributes
Model Number:
SP2305AT2
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.7A
RDS(on):
52mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
140pF
Number:
-
Output Capacitance(Coss):
191pF
Input Capacitance(Ciss):
1.02nF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
19nC@4.5V
Mfr. Part #:
SP2305AT2
Package:
SOT-23
Product Description
Product Overview
The SP2305AT2 is a 20V P-Channel MOSFET designed for applications such as PA switches and load switches. It offers a low on-resistance of 33m at -4.5V and 43m at -2.5V, with a continuous drain current of -4.7A. This MOSFET is housed in a compact SOT-23 package.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Model: SP2305AT2
- Type: P-Channel MOSFET
- Voltage Rating: 20V
- Package: SOT-23
- Origin: Shanghai
- Version: Ver-1.1
- Publication Date: 2023/06
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| RDS(on) | @ -4.5V | 33 | 39 | m | ||
| RDS(on) | @ -2.5V | 43 | 52 | m | ||
| Continuous Drain Current | ID | -4.7 | A | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | -4.7 | A | |||
| Pulsed Drain Current | IDM | -20 | A | |||
| Power Dissipation | PD | 0.35 | W | |||
| Thermal Resistance Junction to Ambient | RJA | 357 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | ~ +150 | |||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-16V,VGS = 0V | -1 | A | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 1 | A | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.4 | -0.75 | -1 | V |
| Drain-source on-resistance | RDS(on) | VGS =-4.5V, ID =-2.7A | 33 | 39 | m | |
| Drain-source on-resistance | RDS(on) | VGS =-2.5V, ID =-2.7A | 43 | 52 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =-10V,VGS =0V,f =1MHz | 1020 | pF | ||
| Output Capacitance | Coss | 191 | pF | |||
| Reverse Transfer Capacitance | Crss | 140 | pF | |||
| Total Gate Charge | Qg | VDS =-10V, VGS =-4.5V,ID=-4.7A | 12.5 | 19 | nC | |
| Gate-Source Charge | Qgs | 1.7 | nC | |||
| Gate-Drain Charge | Qgd | 3.3 | nC | |||
| Switching | ||||||
| Turn-on delay time | td(on) | VGEN=-4.5V,VDD=-10V, ID =-1A,RG=6 | 25 | 40 | ns | |
| Turn-on rise time | tr | 43 | 65 | ns | ||
| Turn-off delay time | td(off) | 71 | 110 | ns | ||
| Turn-off fall time | tf | 48 | 75 | ns | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward voltage | VSD | VGS =0V, IS=-1A | -1.2 | V | ||
| SOT-23 Package Information | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| E1 | 2.25 | 2.55 | ||||
| e | 0.95 REF. | |||||
| e1 | 1.80 | 2.00 | ||||
| L | 0.55 REF. | |||||
| L1 | 0.30 | 0.50 | ||||
| 0 | 8 | |||||
2411212332_Siliup-SP2305AT2_C41355157.pdf
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