power management MOSFET Siliup SP010N03AGHTO with 100V drain source voltage and low RDS on resistance
Key Attributes
Model Number:
SP010N03AGHTO
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
240A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 N-channel
Output Capacitance(Coss):
1.067nF
Input Capacitance(Ciss):
7.162nF
Pd - Power Dissipation:
260W
Gate Charge(Qg):
105nC@10V
Mfr. Part #:
SP010N03AGHTO
Package:
TOLL-8L
Product Description
Product Overview
The SP010N03AGHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is ideal for PWM applications, hard switched, and high-frequency circuits, as well as power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N03AGHTO
- Technology: Advanced Split Gate Trench Technology
- Package: TOLL
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| RDS(on) Typ | RDS(on)TYP | @10V | 2.6 | m | ||
| Continuous Drain Current | ID | 240 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 100 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current (Tc=25) | ID | (Ta=25, unless otherwise noted) | 240 | A | ||
| Continuous Drain Current (Tc=100) | ID | (Ta=25, unless otherwise noted) | 160 | A | ||
| Pulsed Drain Current | IDM | (Ta=25, unless otherwise noted) | 960 | A | ||
| Single Pulse Avalanche Energy | EAS | (Ta=25, unless otherwise noted) | 1225 | mJ | ||
| Power Dissipation (Tc=25) | PD | (Ta=25, unless otherwise noted) | 260 | W | ||
| Thermal Resistance Junction-to-Case | RJC | (Ta=25, unless otherwise noted) | 0.48 | /W | ||
| Storage Temperature Range | TSTG | (Ta=25, unless otherwise noted) | -55 | 150 | ||
| Operating Junction Temperature Range | TJ | (Ta=25, unless otherwise noted) | -55 | 150 | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 100 | 110 | - | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 30A | - | 2.6 | 3.0 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 7162 | - | pF |
| Output Capacitance | Coss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 1067 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 35 | - | pF |
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=100A | - | 105 | - | nC |
| Gate-Source Charge | Qgs | VDS=50V , VGS=10V , ID=100A | - | 47 | - | nC |
| Gate-Drain Charge | Qg d | VDS=50V , VGS=10V , ID=100A | - | 23 | - | nC |
| Turn-On Delay Time | td(on) | VGS = 10V, VDS =50V, ID=100A RG = 6 | - | 26 | - | nS |
| Rise Time | tr | VGS = 10V, VDS =50V, ID=100A RG = 6 | - | 75 | - | nS |
| Turn-Off Delay Time | td(off) | VGS = 10V, VDS =50V, ID=100A RG = 6 | - | 87 | - | nS |
| Fall Time | tf | VGS = 10V, VDS =50V, ID=100A RG = 6 | - | 30 | - | nS |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 240 | A | |
| Body Diode Reverse Recovery Time | Trr | IS=100A, di/dt=100A/us, TJ=25 | - | 72 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | IS=100A, di/dt=100A/us, TJ=25 | - | 180 | - | nC |
| Package Dimensions (TOLL) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Nom. | Max. | ||
| A | 2.20 | 2.30 | 2.40 | |||
| b | 0.65 | 0.75 | 0.85 | |||
| C | 0.508 | REF | ||||
| D | 10.25 | 10.40 | 10.55 | |||
| D1 | 2.85 | 3.00 | 3.15 | |||
| E | 9.75 | 9.90 | 10.05 | |||
| E1 | 9.65 | 9.80 | 9.95 | |||
| E2 | 8.95 | 9.10 | 9.25 | |||
| E3 | 7.25 | 7.40 | 7.55 | |||
| e | 1.20 | BSC | ||||
| F | 1.05 | 1.20 | 1.35 | |||
| H | 11.55 | 11.70 | 11.85 | |||
| H1 | 6.03 | 6.18 | 6.33 | |||
| H2 | 6.85 | 7.00 | 7.15 | |||
| H3 | 3.00 | BSC | ||||
| L | 1.55 | 1.70 | 1.85 | |||
| L1 | 0.55 | 0.7 | 0.85 | |||
| L2 | 0.45 | 0.6 | 0.75 | |||
| M | 0.08 | REF. | ||||
| 8 | 10 | 12 | ||||
| K | 4.25 | 4.40 | 4.55 | |||
2504101957_Siliup-SP010N03AGHTO_C22385353.pdf
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