1200V SiC MOSFET Module S1P14R120HSE-A Suitable for Smart Grid Transmission and Distribution Systems
Key Attributes
Model Number:
S1P14R120HSE-A
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
22pF
Input Capacitance(Ciss):
5.521nF
Pd - Power Dissipation:
349W
Gate Charge(Qg):
230nC
Mfr. Part #:
S1P14R120HSE-A
Package:
SOT-227
Product Description
Product Overview
The S1P14R120HSE-A is a 1200V / 14m SiC Power MOSFET Module designed for high-speed switching applications. It offers very low switching losses, high blocking voltage with low on-resistance, and temperature-independent turn-off switching losses. With ultra-low thermal resistance and an isolated back-side, this module is suitable for demanding applications such as solar power optimizers, UPS systems, motor drives, high power converters, photovoltaic and wind power generation, induction heating equipment, and smart grid transmission and distribution.
Product Attributes
- Brand: (Sichain Semiconductor)
- Origin: (Ningbo)
- Material: SiC (Silicon Carbide)
- Model: S1P14R120HSE-A
- Package: SOT227
Technical Specifications
| Parameter | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|
| Key Performance and Package Parameters | ||||
| Type | S1P14R120HSE-A | |||
| VDS | 1200 | V | ||
| IDS (TC = 25) | 120 | A | ||
| Rth (j-c),max | 14 | m | (VGS = 18V, ID = 100A, TJ = 25) | |
| RDS(on), typ | 14 | m | (VGS = 18V, ID = 100A, TJ = 25) | |
| TJ,max | 175 | |||
| Marking | S1P14R120HSE-A | |||
| Package | SOT227 | |||
| Maximum Ratings | ||||
| VDS,max (Drain source voltage) | 1200 | V | VGS = 0V, ID = 100A | |
| VGS,max (Gate source voltage) | -8 /+22 | V | Absolute maximum values | |
| VGSop (Gate source voltage) | -4 /+18 | V | Recommended operational values | |
| ID (Continuous drain current) | 120 | A | VGS = 18V, TC = 25C | Fig.16 |
| ID | 85 | A | VGS = 18V, TC = 100C | |
| ID(pulse) (Pulsed drain current) | 240 | A | Pulse width tp limited by TJ,max | Fig.19 |
| PD (Power dissipation) | 349 | W | TC= 25C, TJ = 175C | Fig.17 |
| TJ ,Tstg (Operating Junction and storage temperature) | -55 to +175 | C | ||
| Thermal / Packaging Characteristics | ||||
| Rth-JC (Thermal Resistance, Junction to Case) | - | /W | Note1: Rth-JC for SiC MOS | |
| Rth-JC | 0.34 - 0.43 | /W | Note1 | |
| Rth-JC | - 0.5 | /W | Note2: Rth-JC for SiC SBD | |
| VISO (Isolation Test Voltage RMS) | 2.5 | kV | f=50Hz, t=1min | |
| Creepage (Terminal to Heatsink) | 8.5 | mm | ||
| Creepage (Terminal to Terminal) | 10.5 | mm | ||
| Clearance (Terminal to Heatsink) | 6.8 | mm | ||
| Clearance (Terminal to Terminal) | 4.4 | mm | ||
| Tjmax (Maximum Junction Temperature) | 175 | C | ||
| Tjop (Operation Junction Temperature) | -55 to +175 | - | ||
| TSTG (Storage Temperature Range) | -55 to +175 | - | ||
| W (Weight) | 28.5 | g | ||
| TM (Screws to Heatsink Mounting Torque) | 1.5 | Nm | ||
| TC (Terminal Connection Torque (M4 *9mm)) | 1.3 | Nm | ||
| Electrical Characteristics | ||||
| V(BR)DSS (Drain-source breakdown voltage) | 1200 | V | VGS = 0V, ID = 100A | |
| VGS(th) (Gate threshold voltage) | 2.3 - 3.6 | V | VDS = VGS, ID = 28mA | Fig.11 |
| VGS(th) | 2.0 | V | VDS = VGS, ID = 28mA, TJ = 175C | |
| IDSS (Zero gate voltage drain current) | 1 - 10 | A | VDS = 1200V, VGS = 0V | |
| IGSS (Gate source leakage current) | - 100 | nA | VGS = 18V, VDS = 0V | |
| RDS(on) (Current drain-source on-state resistance) | 17 - 21 | m | VGS = 15V, ID = 100A | Fig.4,5, 6 |
| RDS(on) | 28 | m | VGS = 15V, ID =100A, TJ = 175C | |
| RDS(on) | 14 - 18 | m | VGS = 18V, ID = 100A | |
| RDS(on) | 24 | m | VGS = 18V, ID =100A, TJ = 175C | |
| gfs (Transconductance) | 72 | S | VDS = 20V, ID = 100A | Fig.7 |
| gfs | 57 | S | VDS = 20V, ID =100A, TJ = 175C | |
| Rg,int (Internal gate resistance) | 0.9 | VAC = 25mV, f = 1MHz, open drain | ||
| VSD (Diode forward voltage) | 4.0 | V | VGS = -4V, ISD = 50A | Fig.8,9, 10 |
| VSD | 3.5 | V | VGS = -4V, ISD = 5A TJ = 175C | |
| Ciss (Input capacitance) | 5521 | pF | VDS = 1000V, VGS = 0V TJ = 25C, VAC = 25mV f = 100kHz | Fig.14, 15 |
| Coss (Output capacitance) | 247 | pF | ||
| Crss (Reverse capacitance) | 22 | pF | ||
| Eoss (Coss stored energy) | 158 | J | ||
| Qgs (Gate source charge) | 54 | nC | VDS = 800V, VGS = -4/+18V ID = 100A | Fig.12 |
| Qgd (Gate drain charge) | 45 | nC | ||
| Qg (Gate charge) | 230 | nC | ||
| Eon (Turn on switching energy) | 812* | J | VDS = 800V, VGS = -4/+18V ID = 100A, Rg = 2.5, L = 16.7H | * By estimated |
| Eoff (Turn off switching energy) | 383* | J | * By estimated | |
| tdon (Turn on delay time) | 19* | ns | * By estimated | |
| tr (Rise time) | 29* | ns | * By estimated | |
| tdoff (Turn off delay time) | 42* | ns | * By estimated | |
| tf (Fall time) | 9.3* | ns | * By estimated | |
| SiC SBD Characteristics | ||||
| VRRM (Repetitive Peak Reverse Voltage) | 1200 | V | ||
| IF (Continuous Forward Current) | 134 | A | Tc = 25 | |
| IF | 64 | A | Tc = 135 | |
| IF | 40 | A | Tc = 155 | |
| IFSM (Non-Repetitive Peak Forward Surge Current) | 300 | A | Tp=10ms, Half Sine Pulse | |
| VF (Forward Voltage) | 1.4 - 1.8 | V | IDS=40A | |
| VF | 1.9 - 2.5 | V | IDS=40A, Tj=175 | |
| IR (Reverse Current) | 2 - 200 | A | VR=1200V | |
| IR | 20 - 500 | A | VR=1200V, Tj=175 | |
| Qc (Total Capacitive Charge) | 228 | nC | VR=800V, IF=40A di/dt=200A/s | |
| C (Total Capacitance) | 4240 | pF | VR=0V, f=1MHz | |
| C | 208 | pF | VR=400V, f=1MHz | |
| C | 152 | pF | VR=800V, f=1MHz | |
2411261513_Sichainsemi-S1P14R120HSE-A_C37636089.pdf
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