switching MOSFET Siliup SP30N01AATO N Channel 30V device with low RDS on and avalanche energy tested
Key Attributes
Model Number:
SP30N01AATO
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
290A
Operating Temperature -:
-55℃~+150℃
RDS(on):
0.6mΩ@10V;0.9mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.551nF
Number:
1 N-channel
Output Capacitance(Coss):
1.619nF
Input Capacitance(Ciss):
13.862nF
Pd - Power Dissipation:
320W
Gate Charge(Qg):
230nC@10V
Mfr. Part #:
SP30N01AATO
Package:
TOLL-8L
Product Description
Product Overview
The SP30N01AATO is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This MOSFET is designed for power switching applications, DC-DC converters, and power management systems. It features fast switching, low gate charge, and low RDS(on) with values of 0.6m at 10V and 0.9m at 4.5V. The device is 100% tested for single pulse avalanche energy and comes in a TOLL package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP30N01AATO
- Type: N-Channel MOSFET
- Package: TOLL
- Material: Silicon
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 30 | V | |||
| RDS(on) | @10V | 0.6 | m | |||
| RDS(on) | @4.5V | 0.9 | m | |||
| Continuous Drain Current | ID | @10V | 290 | A | ||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 290 | A | |||
| Continuous Drain Current (Tc=100) | ID | 193 | A | |||
| Pulsed Drain Current | IDM | 1160 | A | |||
| Single Pulse Avalanche Energy | EAS | 673 | mJ | |||
| Power Dissipation (Tc=25) | PD | 320 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.39 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 30 | 34 | - | V |
| Drain Cut-Off Current | IDSS | VDS = 24V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1 | 1.8 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 30A | - | 0.6 | 0.75 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS = 4.5V, ID = 20A | - | 0.9 | 1.2 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =15V, VGS = 0V, f = 1.0MHz | - | 12548 | - | pF |
| Output Capacitance | Coss | - | 1726 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 1064 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=160A | - | 230 | - | nC |
| Gate-Source Charge | Qgs | - | 30 | - | ||
| Gate-Drain Charge | Qg | - | 55 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 15V, RL = 15 RG = 2.5 | - | 15 | - | nS |
| Rise Time | tr | - | 205 | - | ||
| Turn-Off Delay Time | td(off) | - | 83 | - | ||
| Fall Time | tf | - | 127 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 193 | A | |
| Body Diode Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - | 65 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | 178 | - | nC | |
| Package Information (TOLL) | ||||||
| Symbol | Dimensions (mm) | Min | Nom | Max | ||
| A | 2.20 | 2.30 | 2.40 | |||
| b | 0.65 | 0.75 | 0.85 | |||
| C | 0.508 | REF | ||||
| D | 10.25 | 10.40 | 10.55 | |||
| D1 | 2.85 | 3.00 | 3.15 | |||
| E | 9.75 | 9.90 | 10.05 | |||
| E1 | 9.65 | 9.80 | 9.95 | |||
| E2 | 8.95 | 9.10 | 9.25 | |||
| E3 | 7.25 | 7.40 | 7.55 | |||
| e | 1.20 | BSC | ||||
| F | 1.05 | 1.20 | 1.35 | |||
| H | 11.55 | 11.70 | 11.85 | |||
| H1 | 6.03 | 6.18 | 6.33 | |||
| H2 | 6.85 | 7.00 | 7.15 | |||
| H3 | 3.00 | BSC | ||||
| L | 1.55 | 1.70 | 1.85 | |||
| L1 | 0.55 | 0.7 | 0.85 | |||
| L2 | 0.45 | 0.6 | 0.75 | |||
| M | 0.08 | REF. | ||||
| 8 | 10 | 12 | ||||
| K | 4.25 | 4.40 | 4.55 | |||
2504101957_Siliup-SP30N01AATO_C41354847.pdf
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