40V N Channel MOSFET Siliup SP40N12NQ Featuring Low On Resistance Ideal for DC DC Converter Circuits
Product Overview
The SP40N12NQ is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features low on-resistance and low input capacitance, making it suitable for power management functions and DC-DC converters. This device is available in a PDFN2X2-6L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP40N12NQ
- Channel Type: N-Channel MOSFET
- Package: PDFN2X2-6L
- Device Code: 40N12
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 40 | V | |||
| On-Resistance | RDS(on)TYP | 10V | 12 | m | ||
| On-Resistance | RDS(on)TYP | 4.5V | 16 | m | ||
| Continuous Drain Current | ID | 10 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | 40 | V | ||
| Gate-Source Voltage | VGS | (Ta=25 unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Ta=25 unless otherwise noted) | 10 | A | ||
| Pulsed Drain Current | IDM | (Ta=25 unless otherwise noted) | 40 | A | ||
| Power Dissipation | PD | (Ta=25 unless otherwise noted) | 2.4 | W | ||
| Thermal Resistance from Junction-to-Ambient | RJA | (Ta=25 unless otherwise noted) | 52 | /W | ||
| Operating Junction Temperature Range | TSTG | (Ta=25 unless otherwise noted) | -55 | +150 | ||
| Storage Temperature Range | TJ | (Ta=25 unless otherwise noted) | -55 | +150 | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =8A | - | 12 | 15 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =4A | - | 16 | 22 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 1013 | - | pF |
| Output Capacitance | Coss | VDS=15V , VGS=0V , f=1MHz | - | 109 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V , VGS=0V , f=1MHz | - | 96 | - | pF |
| Total Gate Charge | Qg | VDS=15V , VGS=4.5V , ID=8A | - | 22.9 | - | nC |
| Gate-Source Charge | Qgs | VDS=15V , VGS=4.5V , ID=8A | - | 3.5 | - | |
| Gate-Drain Charge | Qgd | VDS=15V , VGS=4.5V , ID=8A | - | 5.3 | - | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=15V VGS=10V , RG=1.5, ID=8A | - | 5.5 | - | nS |
| Rise Time | Tr | VDD=15V VGS=10V , RG=1.5, ID=8A | - | 14 | - | |
| Turn-Off Delay Time | Td(off) | VDD=15V VGS=10V , RG=1.5, ID=8A | - | 24 | - | |
| Fall Time | Tf | VDD=15V VGS=10V , RG=1.5, ID=8A | - | 12 | - | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (PDFN2X2-6L) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Typ. | Max. | ||
| A | 0.70 | 0.75 | 0.80 | |||
| A1 | 0.02 | 0.05 | ||||
| b | 0.25 | 0.30 | 0.35 | |||
| b1 | 0.20REF | |||||
| c | 0.203REF | |||||
| D | 1.90 | 2.00 | 2.10 | |||
| D1 | 0.08 | 0.125 | 0.18 | |||
| D2 | 0.85 | 0.90 | 0.95 | |||
| D3 | 0.25 | 0.30 | 0.35 | |||
| D4 | 0.33 | 0.375 | 0.43 | |||
| e | 0.65BSC | |||||
| Nd | 1.30BSC | |||||
| E | 1.90 | 2.00 | 2.10 | |||
| E2 | 0.95 | 1.00 | 1.05 | |||
| E3 | 0.55 | 0.60 | 0.65 | |||
| L | 0.20 | 0.25 | 0.30 | |||
| h | 0.25REF | |||||
2504101957_Siliup-SP40N12NQ_C41355052.pdf
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