S2M040150HJ N Channel Enhancement Mode Silicon Carbide MOSFET 1500V Low On Resistance Fast Switching
Key Attributes
Model Number:
S2M040150HJ
Product Custom Attributes
Drain To Source Voltage:
1.5kV
Current - Continuous Drain(Id):
72A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6.4pF
Pd - Power Dissipation:
341W
Input Capacitance(Ciss):
2.11nF
Gate Charge(Qg):
78nC
Mfr. Part #:
S2M040150HJ
Package:
TO-247-4L
Product Description
Product Overview
The S2M040150HJ is a 1500V Silicon Carbide (SiC) Power MOSFET from Qingchun Semiconductor (Ningbo) Co., Ltd. This N-Channel Enhancement mode MOSFET features high-speed switching capabilities with very low switching losses and fully controllable dv/dt. It offers a high blocking voltage combined with low on-resistance and a fast intrinsic diode with low reverse recovery charge (Qrr). Its temperature-independent turn-off switching losses and halogen-free, RoHS compliant design contribute to reduced cooling efforts, improved efficiency, increased power density, and the ability to operate at higher system switching frequencies. Key applications include on-board chargers/PFC, EV battery chargers, booster/DC-DC converters, and switch mode power supplies.
Product Attributes
- Brand: TriQSiCTM
- Manufacturer: Qingchun Semiconductor (Ningbo) Co., Ltd.
- Material: Silicon Carbide (SiC)
- Channel Type: N Channel Enhancement
- Compliance: Halogen free, RoHS compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions | Notes |
|---|---|---|---|---|---|
| Type | - | S2M040150HJ | - | - | Preliminary |
| Drain-Source Voltage | VDS,max | 1500 | V | VGS = 0V, ID = 100A | - |
| Gate-Source Voltage (Absolute Max) | VGS,max | -8 /+22 | V | - | Note1 |
| Gate-Source Voltage (Recommended Operational) | VGSop | -4 /+18 | V | - | - |
| Continuous Drain Current | ID | 72 | A | VGS = 18V, TC = 25C | Fig.19 |
| Continuous Drain Current | ID | 51 | A | VGS = 18V, TC = 100C | - |
| Pulsed Drain Current | ID(pulse) | 144 | A | Pulse width tP limited by TJ,max | Fig.22 |
| Power Dissipation | PD | 341 | W | TC= 25C,TJ = 175C | Fig.20 |
| Operating Junction and Storage Temperature | TJ ,Tstg | -55 to +175 | C | - | - |
| Soldering Temperature | TL | 260 | C | 1.6mm (0.063) from case for 10s | - |
| Mounting Torque | TM | 1.8 | Nm (lbf-in) | M3 or 6-32 screw | - |
| Thermal Resistance Junction-to-Case | Rth(j-c) | - | C/W | - | Fig.21 (Typ: 0.35, Max: 0.44) |
| Drain-Source Breakdown Voltage | V(BR)DSS | 1500 | V | VGS = 0V, ID = 100A | - |
| Gate Threshold Voltage | VGS(th) | 1.7 - 3.6 | V | VDS = VGS, ID = 10mA | Fig.11 (Typ: 2.1) |
| Gate Threshold Voltage (at 175C) | VGS(th) | - | V | VDS = VGS, ID = 10mA, TJ = 175C | (Typ: 1.4) |
| Zero Gate Voltage Drain Current | IDSS | - 10 | A | VDS = 1500V, VGS = 0V | (Max: 10) |
| Gate Source Leakage Current | IGSS | - 100 | nA | VGS = 18V, VDS = 0V | - |
| Drain-Source On-State Resistance | RDS(on) | - 65 | m | VGS = 15V, ID = 34A, TJ = 175C | (Typ: 37, Max: 65) |
| Drain-Source On-State Resistance | RDS(on) | - 52 | m | VGS = 18V, ID = 34A, TJ = 175C | (Typ: 33, Max: 52) |
| Transconductance | gfs | - 23 | S | VDS = 20V, ID = 34A | (Typ: 23) |
| Transconductance (at 175C) | gfs | - 21 | S | VDS = 20V, ID = 34A, TJ = 175C | (Typ: 21) |
| Internal Gate Resistance | Rg,int | - 0.4 | VAC = 25mV, f = 1MHz, open drain | - | |
| Input Capacitance | Ciss | - 2110 | pF | VDS = 1000V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100kHz | Fig.17, 18 |
| Output Capacitance | Coss | - 89 | pF | - | - |
| Reverse Capacitance | Crss | - 6.4 | pF | - | - |
| Output Capacitor Stored Energy | Eoss | - 64 | J | - | Fig.16 |
| Gate Source Charge | Qgs | - 21 | nC | VDS = 1000V, VGS = -4/+18V, ID = 34A | Fig.12 |
| Gate Drain Charge | Qgd | - 25 | nC | - | - |
| Gate Charge | Qg | - 78 | nC | - | - |
| Turn On Switching Energy | Eon | - 332 | J | VDS = 1000V, VGS = -4/+18V, ID = 34A, Rg = 2.5, L = 120H | Fig.26 |
| Turn Off Switching Energy | Eoff | - 93 | J | - | - |
| Turn On Delay Time | tdon | - 15 | ns | - | Fig.27 |
| Rise Time | tr | - 12 | ns | - | - |
| Turn Off Delay Time | tdoff | - 26 | ns | - | - |
| Fall Time | tf | - 9 | ns | - | - |
| Diode Forward Voltage | VSD | - 3.7 | V | VGS = -4V, ISD = 17A | Fig.8,9, 10 (Typ: 3.4 at 175C) |
| Continuous Diode Forward Current | IS | - 72 | A | VGS = -4V, Tc = 25C | Note2 |
| Reverse Recovery Time | trr | - 39.6 | ns | VR = 1000V, VGS = -4V, ISD = 34A, di/dt = 2509A/s, TJ = 175C | - |
| Reverse Recovery Charge | Qrr | - 344 | nC | - | - |
| Peak Reverse Recovery Current | Irrm | - 20 | A | - | - |
| Package Type | - | TO-247-4L | - | - | - |
| Marking | - | S2M040150HJ | - | - | - |
2504101957_Sichainsemi-S2M040150HJ_C42456098.pdf
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