Surface mount complementary MOSFET Siliup SP1012ACNK 100V fast switching speed ROHS compliant device

Key Attributes
Model Number: SP1012ACNK
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
10A;7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
70mΩ@10V;230mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
19pF;18pF
Number:
-
Output Capacitance(Coss):
23pF;30pF
Input Capacitance(Ciss):
792pF;721pF
Pd - Power Dissipation:
22W
Gate Charge(Qg):
13.6nC@10V;16nC@10V
Mfr. Part #:
SP1012ACNK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP1012ACNK is a 100V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mount applications, it offers fast switching speeds and is ROHS Compliant & Halogen-Free. The device has undergone 100% single pulse avalanche energy testing. It is suitable for applications such as DC-DC converters and motor control.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP1012ACNK
  • Type: Complementary MOSFET
  • Package: PDFN5X6-8L
  • Certifications: ROHS Compliant & Halogen-Free
  • Features: Fast switching speed, Surface mount package, 100% Single Pulse avalanche energy Test

Technical Specifications

Parameter Symbol N-Channel Conditions N-Channel Rating P-Channel Conditions P-Channel Rating Unit
Drain-Source Voltage VDS 100V -100V V
VGS=0V , ID=250uA 100 VGS=0V , ID=-250uA -100 V
Gate-Source Voltage VGS 20V 20V V
VGS=20V , VDS=0V - VGS=20V , VDS=0V - nA (Leakage)
Continuous Drain Current ID (Tc=25C) 10A (Tc=25C) -7A A
VGS = 10V, ID = 2A - VGS =-10V, ID =-2A - m (RDS(ON))
Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 2A 70m (Typ.) VGS =-10V, ID =-2A 230m (Typ.) m
VGS = 4.5V, ID = 1A 85m (Typ.) VGS =-4.5V, ID =-1A 240m (Typ.) m
Pulse Drain Current IDM 40A -28A A
Single pulsed avalanche energy EAS 25mJ 49mJ mJ
Power Dissipation PD (Tc=25C) 22W (Tc=25C) 22W W
Thermal Resistance Junction-to-Case RJC 5.7 C/W 5.7 C/W C/W
Storage Temperature Range TSTG -55 to 150 C C
Operating Junction Temperature Range TJ -55 to 150 C C
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 to 2.5V VGS=VDS , ID =-250uA -1.0 to -2.5V V
Input Capacitance Ciss VDS=50V , VGS=0V , f=1MHz 792pF (Typ.) VDS=-50V , VGS=0V , f=1MHz 721pF (Typ.) pF
Output Capacitance Coss VDS=50V , VGS=0V , f=1MHz 23pF (Typ.) VDS=-50V , VGS=0V , f=1MHz 30pF (Typ.) pF
Reverse Transfer Capacitance Crss VDS=50V , VGS=0V , f=1MHz 19pF (Typ.) VDS=-50V , VGS=0V , f=1MHz 18pF (Typ.) pF
Total Gate Charge Qg VDS=50V , VGS=10V , ID=3A 13.6nC (Typ.) VDS=-50V , VGS=-10V , ID=-3A 16nC (Typ.) nC
Gate-Source Charge Qgs 2.1nC (Typ.) 3nC (Typ.) nC
Gate-Drain Charge Qgd 1.9nC (Typ.) 2.5nC (Typ.) nC
Turn-On Delay Time Td(on) VDD=50V VGS=10V , RG=3, ID=3A 7nS (Typ.) VDD=-50V VGS=-10V , RG=6, ID=-3A 9nS (Typ.) nS
Rise Time Tr 1.5nS (Typ.) 6.5nS (Typ.) nS
Turn-Off Delay Time Td(off) 15.3nS (Typ.) 28nS (Typ.) nS
Fall Time Tf 2nS (Typ.) 7.5nS (Typ.) nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 1.2V (Typ.) VGS=0V , IS=-1A , TJ=25 -1.2V (Typ.) V
Maximum Body-Diode Continuous Current IS 10A -7A A
Reverse recover time Trr IS=10A, di/dt=100A/us, Tj=25 35nS (Typ.) IS=-7A, di/dt=-100A/us, Tj=25 32nS (Typ.) nS
Reverse recovery charge Qrr 21nC (Typ.) 47nC (Typ.) nC
PDFN5X6-8L Package Information
Symbol Dimensions In Millimeters Dimensions In Inches
A 0.900 - 1.000 0.035 - 0.039
A3 0.254 REF. 0.010 REF.
D 4.944 - 5.096 0.195 - 0.201
E 5.974 - 6.126 0.235 - 0.241
D1 1.470 - 1.870 0.058 - 0.074
D2 0.470 - 0.870 0.019 - 0.034
E1 3.375 - 3.575 0.133 - 0.141
D3 4.824 - 4.976 0.190 - 0.196
E2 5.674 - 5.826 0.223 - 0.229
k 1.190 - 1.390 0.047 - 0.055
b 0.350 - 0.450 0.014 - 0.018
e 1.270 TYP. 0.050 TYP.
L 0.559 - 0.711 0.022 - 0.028
L1 0.424 - 0.576 0.017 - 0.023
H 0.574 - 0.726 0.023 - 0.029
10 - 12 10 - 12

2504101957_Siliup-SP1012ACNK_C22385427.pdf
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