N Channel Power MOSFET Siliup SP010N02GHTD Featuring Split Gate Trench Technology and Low Gate Charge Design
Key Attributes
Model Number:
SP010N02GHTD
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
270A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.7V@250uA
Reverse Transfer Capacitance (Crss@Vds):
48pF
Number:
1 N-channel
Input Capacitance(Ciss):
13.42nF
Output Capacitance(Coss):
2.034nF
Pd - Power Dissipation:
260W
Gate Charge(Qg):
156nC@10V
Mfr. Part #:
SP010N02GHTD
Package:
TO-263
Product Description
Product Overview
The SP010N02GHTD is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for PWM applications, hard switched and high-frequency circuits, and power management solutions.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N02GHTD
- Technology: Advanced Split Gate Trench Technology
- Package: TO-263
- Channel Type: N-Channel
- Device Code: 010N02GH
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| RDS(on) Typ | RDS(on) | @10V | 1.9 | m | ||
| Continuous Drain Current | ID | 270 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 100 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 270 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 180 | A | ||
| Pulsed Drain Current | IDM | 1080 | A | |||
| Single Pulse Avalanche Energy | EAS | 1560 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 260 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.48 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 | 2.7 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=20A | - | 1.9 | 2.4 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 13420 | - | pF |
| Output Capacitance | Coss | VDS=50V , VGS=0V , f=1MHz | - | 2034 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V , VGS=0V , f=1MHz | - | 48 | - | pF |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=125A | - | 156 | - | nC |
| Gate-Source Charge | Qgs | VDS=50V , VGS=10V , ID=125A | - | 51 | - | nC |
| Gate-Drain Charge | Qg | VDS=50V , VGS=10V , ID=125A | - | 45 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=50V, VGS=10V , RG=1.6, ID=125A | - | 35 | - | nS |
| Rise Time | tr | VDD=50V, VGS=10V , RG=1.6, ID=125A | - | 68 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=50V, VGS=10V , RG=1.6, ID=125A | - | 150 | - | nS |
| Fall Time | tf | VDD=50V, VGS=10V , RG=1.6, ID=125A | - | 105 | - | nS |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 270 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - | 106 | - | nS |
| Reverse Recovery Charge | Qrr | IS=50A, di/dt=100A/us, TJ=25 | - | 328 | - | nC |
| Package Information (TO-263) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.470 | 4.670 | 0.176 | 0.184 | ||
| A1 | 0.000 | 0.150 | 0.000 | 0.006 | ||
| B | 1.120 | 1.420 | 0.044 | 0.056 | ||
| b | 0.710 | 0.910 | 0.028 | 0.036 | ||
| b1 | 1.170 | 1.370 | 0.046 | 0.054 | ||
| c | 0.310 | 0.530 | 0.012 | 0.021 | ||
| c1 | 1.170 | 1.370 | 0.046 | 0.054 | ||
| D | 10.010 | 10.310 | 0.394 | 0.406 | ||
| E | 8.500 | 8.900 | 0.335 | 0.350 | ||
| e | 2.540 TYP. | 0.100 TYP. | ||||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 | ||
| L | 14.940 | 15.500 | 0.588 | 0.610 | ||
| L1 | 4.950 | 5.450 | 0.195 | 0.215 | ||
| L2 | 2.340 | 2.740 | 0.092 | 0.108 | ||
| L3 | 1.300 | 1.700 | 0.051 | 0.067 | ||
| 0 | 8 | 0 | 8 | |||
| V | 5.600 REF. | 0.220 REF. | ||||
2504101957_Siliup-SP010N02GHTD_C22385363.pdf
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