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quality N Channel Silicon Carbide MOSFET SG2M040120LJ 1200V Suitable for On Board Chargers and DC Converters factory
quality N Channel Silicon Carbide MOSFET SG2M040120LJ 1200V Suitable for On Board Chargers and DC Converters factory

N Channel Silicon Carbide MOSFET SG2M040120LJ 1200V Suitable for On Board Chargers and DC Converters

Key Attributes
Model Number: SG2M040120LJ
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
65A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.5pF
Input Capacitance(Ciss):
1.82nF
Pd - Power Dissipation:
268W
Gate Charge(Qg):
60nC
Mfr. Part #:
SG2M040120LJ
Package:
TO-247-4L
Product Description

Product Overview

The SG2M040120LJ is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, fully controllable dv/dt, and high blocking voltage with low on-resistance. The device features a fast intrinsic diode with low reverse recovery charge (Qrr) and temperature-independent turn-off switching losses. Its benefits include cooling effort reduction, efficiency improvement, and increased power density. This MOSFET is suitable for applications such as on-board chargers/PFC, EV battery chargers, booster/DC-DC converters, and switch mode power supplies.

Product Attributes

  • Brand: TriQSiCTM
  • Material: Silicon Carbide (SiC)
  • Channel Type: N Channel Enhancement
  • Compliance: Halogen free, RoHS compliant
  • Manufacturer: (Sichain Semiconductor (Ningbo) Co., Ltd.)

Technical Specifications

Type VDS (V) IDS (TC = 25) (A) RDS(on), typ (m) TJ,max () Marking Package
SG2M040120LJ 1200 65 35 (VGS = 18V, ID = 32A, TJ = 25) 175 SG2M040120LJ TO-247-4L
Symbol Parameter Value Unit Test Conditions Note
VDS,max Drain source voltage 1200 V VGS = 0V, ID = 100A
VGS,max Gate source voltage -8 /+22 V Absolute maximum values Note1
VGSop Gate source voltage -4 /+18 V Recommended operational values
ID Continuous drain current 65 A VGS = 18V, TC = 25C Fig.19
ID Continuous drain current 46 A VGS = 18V, TC = 100C
ID(pulse) Pulsed drain current 130 A Pulse width tP limited by TJ,max Fig.22
PD Power dissipation 268 W TC= 25C,TJ = 175C Fig.20
TJ ,Tstg Operating Junction and storage temperature -55 to +175 C
TL Soldering temperature 260 C 1.6mm (0.063) from case for 10s
TM Mounting torque 1.8 Nm (lbf-in) M3 or 6-32 screw
Rth(j-c) Thermal resistance from junction to case 0.45 - 0.56 C/W Fig.21
V(BR)DSS Drain-source breakdown voltage 1200 V VGS = 0V, ID = 100A
VGS(th) Gate threshold voltage 2.3 - 3.6 V VDS = VGS, ID = 9mA Fig.11
VGS(th) Gate threshold voltage 2.1 V VDS = VGS, ID = 9mA TJ = 175C
IDSS Zero gate voltage drain current 1 - 10 A VDS = 1200V, VGS = 0V
IGSS Gate source leakage current 100 nA VGS = 18V, VDS = 0V
RDS(on) Current drain-source on-state resistance 40 - 59 m VGS = 15V, ID = 32A Fig.4,5, 6
RDS(on) Current drain-source on-state resistance 67 m VGS = 15V, ID = 32A, TJ = 175C
RDS(on) Current drain-source on-state resistance 35 - 48 m VGS = 18V, ID = 32A
RDS(on) Current drain-source on-state resistance 64 m VGS = 18V, ID = 32A, TJ = 175C
gfs Transconductance 22 S VDS = 20V, ID = 32A Fig.7
gfs Transconductance 20 S VDS = 20V, ID = 32A, TJ = 175C
Rg,int Internal gate resistance 2.0 VAC = 25mV, f = 1MHz, open drain
Ciss Input capacitance 1820 pF VDS = 1000V, VGS = 0V TJ = 25C, VAC = 25mV f = 100kHz Fig.17, 18
Coss Output capacitance 106 pF
Crss Reverse capacitance 4.5 pF
Eoss Coss stored energy 59 J Fig.16
Qgs Gate source charge 22 nC VDS = 800V, VGS = -4/+18V ID = 32A Fig.12
Qgd Gate drain charge 18 nC
Qg Gate charge 60 nC
Eon Turn on switching energy 236 J VDS = 800V, VGS = -4/+18V ID = 32A, Rg = 2.5 L = 120H Fig.26
Eoff Turn off switching energy 52 J
tdon Turn on delay time 14 ns Fig.27
tr Rise time 12 ns
tdoff Turn off delay time 23 ns
tf Fall time 8 ns
VSD Diode forward voltage 3.7 V VGS = -4V, ISD = 16A Fig.8,9, 10
VSD Diode forward voltage 3.3 V VGS = -4V, ISD = 16A TJ = 175C
IS Continuous diode forward current 62 A VGS = -4V, Tc = 25C Note2
trr Reverse recovery time 35 ns VR = 800V, VGS = -4V ISD = 32A di/dt = 2633A/s TJ = 175C
Qrr Reverse recovery charge 530 nC
Irrm Peak reverse recovery current 26 A

2504101957_Sichainsemi-SG2M040120LJ_C42456094.pdf

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