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quality Power MOSFET Siliup BSS84 60V P Channel Suitable for Battery Switch and DC DC Converter Applications factory
quality Power MOSFET Siliup BSS84 60V P Channel Suitable for Battery Switch and DC DC Converter Applications factory

Power MOSFET Siliup BSS84 60V P Channel Suitable for Battery Switch and DC DC Converter Applications

Key Attributes
Model Number: BSS84
Product Custom Attributes
Pd - Power Dissipation:
350mW
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
130mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.2Ω@10V;4.5Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 P-Channel
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
30pF
Gate Charge(Qg):
1.8nC@10V
Mfr. Part #:
BSS84
Package:
SOT-23
Product Description

Product Overview

The Siliup Semiconductor BSS84 is a 60V P-Channel MOSFET designed for high power and current handling capabilities. It is suitable for surface mount applications and is ideal for use in battery switches and DC/DC converters. This device offers robust performance with key electrical characteristics optimized for efficient operation.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: BSS84
  • Package: SOT-23
  • Marking: B84
  • Origin: China (implied by website domain and company name)

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -60 V
Static Drain-Source On-Resistance RDS(on) @ -10V 4.2 6
Static Drain-Source On-Resistance RDS(on) @ -4.5V 4.5 7
Continuous Drain Current ID -130 mA
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS -60 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID -130 mA
Pulse Drain Current IDM Tested -520 mA
Power Dissipation PD 350 mW
Thermal Resistance Junction-to-Ambient RJA 357 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250A -60 V
Drain-Source Leakage Current IDSS VDS=-48V , VGS=0V -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 10 uA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250A -0.8 -1.5 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS =-10V, ID =-150mA 4.2 6
Static Drain-Source On-Resistance RDS(ON) VGS =-4.5V, ID =-150mA 4.5 7
Dynamic Characteristics
Input Capacitance Ciss VDS=-5V , VGS=0V , f=1MHz 30 pF
Output Capacitance Coss 10 pF
Reverse Transfer Capacitance Crss 5 pF
Total Gate Charge Qg VDS=-30V , VGS=-10V , ID=-0.15A 1.8 nC
Gate-Source Charge Qgs 0.5
Gate-Drain Charge Qg 0.18
Switching Characteristics
Turn-On Delay Time td(on) VDD=-15V VGS=-10V , RG=50, ID=-0.15A 8.6 nS
Turn-On Rise Time tr 20
Turn-Off Delay Time td(off) 14
Turn-Off Fall Time tf 77
Source-Drain Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
Package Information (SOT-23)
Symbol Dimensions In Millimeters Min. Max.
A 0.90 1.15
A1 0.00 0.10
A2 0.90 1.05
b 0.30 0.50
c 0.08 0.15
D 2.80 3.00
E 1.20 1.40
E1 2.25 2.55
e 0.95 REF.
e1 1.80 2.00
L 0.55 REF.
L1 0.30 0.50
0 8

2504101957_Siliup-BSS84_C41354933.pdf

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