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quality Low RDSon P Channel MOSFET Siliup SP2004KT7J Surface Mount Device for Load Switching and Portable Electronics factory
quality Low RDSon P Channel MOSFET Siliup SP2004KT7J Surface Mount Device for Load Switching and Portable Electronics factory

Low RDSon P Channel MOSFET Siliup SP2004KT7J Surface Mount Device for Load Switching and Portable Electronics

Key Attributes
Model Number: SP2004KT7J
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
700mA
RDS(on):
1Ω@1.8V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 P-Channel
Output Capacitance(Coss):
15pF
Input Capacitance(Ciss):
113pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
SP2004KT7J
Package:
SOT-723
Product Description

Product Overview

The SP2004KT7J is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mount applications, this P-Channel switch features low RDS(on) and operates at low logic level gate drive. It is ESD protected and suitable for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics. The device is marked with 'KD' as its device code.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Package: SOT-723
  • Channel Type: P-Channel
  • Device Code: KD

Technical Specifications

Parameter Symbol Test Condition Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -20 V
RDS(on) @ -4.5V 400 m
@ -2.5V 550 m
Continuous Drain Current ID -0.7 A
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS 10 V
Continuous Drain Current ID -0.7 A
Pulsed Drain Current IDM -2.8 A
Power Dissipation PD 0.15 W
Thermal Resistance from Junction to Ambient RJA 833 /W
Junction Temperature TJ 150
Storage Temperature TSTG -55 +150
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250A -20 V
Zero gate voltage drain current IDSS VDS =-20V,VGS = 0V -1 A
Gate-body leakage current IGSS VGS = 10VVDS =0V 10 A
Gate threshold voltage VGS(th) VDS =VGS, ID =-250A -0.35 -0.65 -1 V
Drain-source on-resistance RDS(on) VGS = -4.5V, ID = -0.5A 400 520 m
VGS = -2.5V, ID = -0.2A 550 700 m
VGS = -1.8V, ID = -0.1A 800 1000 m
Dynamic Characteristics
Input Capacitance Ciss VDS =-16V,VGS =0V,f =1MHz 113 pF
Output Capacitance Coss 15 pF
Reverse Transfer Capacitance Crss 9 pF
Turn-on delay time td(on) VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 9 ns
Turn-on rise time tr 5.7 ns
Turn-off delay time td(off) 32.6 ns
Turn-off fall time tf 20.3 ns
Source-Drain Diode Characteristics
Diode Forward voltage VSD VGS =0V, IS=-0.5 A -1.2 V
Package Information (SOT-723)
Symbol Dimensions In Millimeters Min. Max.
A 0.430 0.500
A1 0.000 0.050
b 0.170 0.270
b1 0.270 0.370
c 0.080 0.150
D 1.150 1.250
E 1.150 1.250
E1 0.750 0.850
e 0.800 (TYP.)
7 (REF.)

2411212332_Siliup-SP2004KT7J_C41355136.pdf

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