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quality Compact P Channel MOSFET Siliup SP30P30T1 with 30 Volt Drain Source Voltage and High Current Handling factory
quality Compact P Channel MOSFET Siliup SP30P30T1 with 30 Volt Drain Source Voltage and High Current Handling factory

Compact P Channel MOSFET Siliup SP30P30T1 with 30 Volt Drain Source Voltage and High Current Handling

Key Attributes
Model Number: SP30P30T1
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
RDS(on):
30mΩ@10V;45mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
112pF
Number:
1 P-Channel
Input Capacitance(Ciss):
850pF
Output Capacitance(Coss):
116pF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
SP30P30T1
Package:
SOT-23-3L
Product Description

Product Overview

The SP30P30T1 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a typical drain-source on-resistance of 30m at -10V gate-source voltage and -6A drain current, and 45m at -4.5V gate-source voltage and -5A drain current.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: P-Channel MOSFET
  • Package: SOT-23-3L
  • Device Code: 30P30

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -30 V
RDS(on) -10V 30 m
RDS(on) -4.5V 45 m
Continuous Drain Current ID -5 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID -5 A
Pulse Drain Current IDM Tested -20 A
Power Dissipation PD 1.3 W
Thermal Resistance Junction-to-Ambient RJA 96 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250A -30 V
Drain-Source Leakage Current IDSS VDS=-24V , VGS=0V -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250A -1.0 -1.6 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID =-6A 30 42 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID =-5A 45 72 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-15V , VGS=0V , f=1MHz 850 pF
Output Capacitance Coss 116 pF
Reverse Transfer Capacitance Crss 112 pF
Total Gate Charge Qg VDS=-15V , VGS=-10V , ID=-6.5A 13 nC
Gate-Source Charge Qgs 2.6
Gate-Drain Charge Qg d 2.2
Switching Characteristics
Turn-On Delay Time td(on) VDD=-15V VGS=-10V , RG=3 , ID=-4A 7.5 nS
Turn-On Rise Time tr 5.5
Turn-Off Delay Time td(off) 19
Turn-Off Fall Time tf 7
Source-Drain Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
Package Information (SOT-23-3L)
Symbol Dimensions in millimeters Min. Max.
A 1.050 1.250
A1 0.000 0.100
A2 1.050 1.150
b 0.300 0.500
c 0.100 0.200
D 2.820 3.020
E 1.500 1.700
E1 2.650 2.950
e 0.950 (Typ.)
e1 1.800 2.000
L 0.300 0.600
0 8

2504101957_Siliup-SP30P30T1_C41354962.pdf

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