SOP8L package complementary MOSFET Siliup SP1012CP8 100V rating lead free product for battery protection
Key Attributes
Model Number:
SP1012CP8
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
3A;2.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@10V;230mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF;18pF
Number:
-
Output Capacitance(Coss):
25pF;30pF
Input Capacitance(Ciss):
695pF;721pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
13.6nC@10V;16nC@10V
Mfr. Part #:
SP1012CP8
Package:
SOP-8L
Product Description
Product Overview
The SP1012CP8 is a 100V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this lead-free product is available in a surface mount SOP-8L package. It features 100% single pulse avalanche energy testing and is suitable for applications such as battery protection, load switching, and power management.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: Complementary MOSFET
- Package: SOP-8L
- Certifications: Lead free product is acquired
- Marking: 1012C (Device Code)
Technical Specifications
| Parameter | Symbol | Conditions | N-Channel Min. | N-Channel Typ. | N-Channel Max. | N-Channel Unit | P-Channel Min. | P-Channel Typ. | P-Channel Max. | P-Channel Unit | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Summary | |||||||||||
| Drain-Source Voltage | V(BR)DSS | 100V | -100V | ||||||||
| RDS(on) | @10V | 120m | 230m | ||||||||
| RDS(on) | @4.5V | 140m | 240m | ||||||||
| Continuous Drain Current | ID | 3A | -2.5A | ||||||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | |||||||||||
| Drain-Source Voltage | VDS | 100 | V | -100 | V | ||||||
| Gate-Source Voltage | VGS | 20 | V | 20 | V | ||||||
| Continuous Drain Current | ID | 3 | A | -2.5 | A | ||||||
| Pulsed Drain Current | IDM | 12 | A | -10 | A | ||||||
| Single Pulse Avalanche Energy | EAS | (Note 1) | 4 | mJ | 12 | mJ | |||||
| Power Dissipation | PD | 2 | W | 2 | W | ||||||
| Thermal Resistance Junction-to-Ambient | RJA | 62.5 | /W | 62.5 | /W | ||||||
| Storage Temperature Range | TSTG | -55 | 150 | -55 | 150 | ||||||
| Operating Junction Temperature Range | TJ | -55 | 150 | -55 | 150 | ||||||
| N-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | |||||||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | V | |||||||
| Drain-Source Leakage Current | IDSS | VDS=80V, VGS=0V, TJ=25 | 1 | uA | -1 | uA | |||||
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | 100 | nA | |||||
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 1.0 | 1.8 | 2.5 | V | -1.0 | -1.8 | -2.5 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=2A | 120 | 150 | m | 230 | 290 | m | |||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=1A | 140 | 190 | m | 240 | 320 | m | |||
| Input Capacitance | Ciss | VDS=50V, VGS=0V, f=1MHz | 695 | pF | 721 | pF | |||||
| Output Capacitance | Coss | 25 | pF | 30 | pF | ||||||
| Reverse Transfer Capacitance | Crss | 17 | pF | 18 | pF | ||||||
| Total Gate Charge | Qg | VDS=50V, VGS=10V, ID=2A | 13.6 | nC | 16 | nC | |||||
| Gate-Source Charge | Qgs | 2.1 | nC | 3 | nC | ||||||
| Gate-Drain Charge | Qgd | 1.9 | nC | 2.5 | nC | ||||||
| Turn-On Delay Time | Td(on) | VDD=50V, VGS=10V, RG=3, ID=3A | 7 | nS | 9 | nS | |||||
| Rise Time | Tr | 1.5 | nS | 6.5 | nS | ||||||
| Turn-Off Delay Time | Td(off) | 15.3 | nS | 28 | nS | ||||||
| Fall Time | Tf | 2 | nS | 7.5 | nS | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | 1.2 | V | -1.2 | V | |||||
| Maximum Body-Diode Continuous Current | IS | 3 | A | -2.5 | A | ||||||
| Reverse Recovery Time | Trr | IS=3A, di/dt=100A/us, TJ=25 | 35 | nS | 35 | nS | |||||
| Reverse Recovery Charge | Qrr | 26 | nC | 45 | nC | ||||||
| Order Information | |||||||||||
| Device | Package | Unit/Tape | |||||||||
| SP1012CP8 | SOP-8L | 4000 | |||||||||
| SOP-8L Package Information (Dimensions In Millimeters) | |||||||||||
| Symbol | Dimensions | Min. | Max. | ||||||||
| A | 1.35 | 1.75 | |||||||||
| A1 | 0.10 | 0.25 | |||||||||
| A2 | 1.35 | 1.55 | |||||||||
| b | 0.33 | 0.51 | |||||||||
| c | 0.17 | 0.25 | |||||||||
| D | 4.80 | 5.00 | |||||||||
| e | 1.27 REF. | ||||||||||
| E | 5.80 | 6.20 | |||||||||
| E1 | 3.80 | 4.00 | |||||||||
| L | 0.40 | 1.27 | |||||||||
| 0 | 8 | ||||||||||
2504101957_Siliup-SP1012CP8_C22385411.pdf
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