ROHS compliant halogen free Siliup SP3011ACNK 30V complementary MOSFET for power electronics

Key Attributes
Model Number: SP3011ACNK
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
29A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
297pF
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
1.65nF
Output Capacitance(Coss):
367pF
Pd - Power Dissipation:
33W
Gate Charge(Qg):
32nC@4.5V
Mfr. Part #:
SP3011ACNK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP3011ACNK is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance applications. It features fast switching speeds, a surface mount package, and is ROHS Compliant & Halogen-Free. This device is 100% Single Pulse avalanche energy tested and is ideal for DC-DC converters and motor control applications.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP3011ACNK
  • Type: Complementary MOSFET
  • Certifications: ROHS Compliant & Halogen-Free
  • Package Type: PDFN5X6-8L
  • Device Code: 3011AC

Technical Specifications

Parameter Symbol N-Channel Conditions N-Channel Rating P-Channel Conditions P-Channel Rating Unit
Drain-Source Voltage VDS 30V -30V V
VGS=0V , ID=250uA 30 VGS=0V , ID=-250uA -30 V
Gate-Source Voltage VGS 20V 20V V
VGS=20V , VDS=0V - 100 nA VGS=20V , VDS=0V - 100 nA
Continuous Drain Current ID (Tc=25C) 29A (Tc=25C) -24A A
VGS = 10V, ID = 8A - 9 11 m VGS =-10V, ID =-8A - 14 21 m m
VGS = 4.5V, ID = 6A - 12 16 m VGS =-4.5V, ID =-6A - 18 27 m m
Pulse Drain Current IDM 106A -96A A
Single pulsed avalanche energy EAS 56mJ 90mJ mJ
Power Dissipation PD (Tc=25C) 29W W
Thermal Resistance RJC 4.3 C/W C/W
Storage Temperature Range TSTG -55 to 150 C C
Operating Junction Temperature Range TJ -55 to 150 C C
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 - 1.5 - 2.5 V VGS=VDS , ID =-250uA -1.0 -1.5 -2.5 V V
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz - 1060 - pF VDS=-15V , VGS=0V , f=1MHz - 1316 - pF pF
Output Capacitance Coss - 85 - pF - 180 - pF pF
Reverse Transfer Capacitance Crss - 56 - pF - 176 - pF pF
Total Gate Charge Qg VDS=15V , VGS=4.5V , ID=8A - 13.8 - nC VDS=-15V , VGS=-4.5V , ID=-8A - 26 - nC nC
Gate-Source Charge Qgs - 3.6 - nC - 2.4 - nC nC
Gate-Drain Charge Qg - 5.5 - nC - 7 - nC nC
Turn-On Delay Time Td(on) VDD=15V VGS=10V , RG=1.5, ID=8A - 5.2 - nS VDD=-15V VGS=-10V , RG=6, ID=-1A - 10 - nS nS
Rise Time Tr - 8.2 - nS - 5 - nS nS
Turn-Off Delay Time Td(off) - 31 - nS - 76 - nS nS
Fall Time Tf - 4 - nS - 60 - nS nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V VGS=0V , IS=-1A , TJ=25 - - -1.2 V V
Diode Continuous Current IS - - 29 A - - -35 A A
Reverse recover time Trr IS=20A, di/dt=100A/us, Tj=25 - 0.9 - nS IS=-20A, di/dt=-100A/us, Tj=25 - 56 - nS nS
Reverse recovery charge Qrr - 7 - nC - 30 - nC nC
PDFN5X6-8L Package Information
Symbol Dimensions In Millimeters Dimensions In Inches
A 0.900 - 1.000 0.035 - 0.039
A3 0.254 REF. 0.010REF.
D 4.944 - 5.096 0.195 - 0.201
E 5.974 - 6.126 0.235 - 0.241
D1 1.470 - 1.870 0.058 - 0.074
D2 0.470 - 0.870 0.019 - 0.034
E1 3.375 - 3.575 0.133 - 0.141
D3 4.824 - 4.976 0.190 - 0.196
E2 5.674 - 5.826 0.223 - 0.229
k 1.190 - 1.390 0.047 - 0.055
b 0.350 - 0.450 0.014 - 0.018
e 1.270TYP. 0.050TYP.
L 0.559 - 0.711 0.022 - 0.028
L1 0.424 - 0.576 0.017 - 0.023
H 0.574 - 0.726 0.023 - 0.029
10 - 12 10 - 12

2504101957_Siliup-SP3011ACNK_C22385426.pdf

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